Gain and photo luminescence in semiconductor lasers

Jorg Hader, Stephan W Koch, A. R. Zakharian, Jerome V Moloney, J. E. Ehret, T. R. Nelson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A general scheme for the determination of vital operating characteristics of semiconductor lasers from low intensity photo-luminescence spectra is outlined and demonstrated. A fully microscopic model for the calculation of optical properties is coupled to a drift diffusion model for the mesoscopic charge and electric field distributions to calculate photo-luminescence and gain spectra in barrier-doped semiconductor laser material. Analyzing experiments on an optically pumped multi quantum-well structure it is demonstrated that the electric fields arising from the space charges of ionized dopants contribute to strongly excitation dependent optical properties, such as significant shifts of the luminescence versus peak gain wavelengths.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
EditorsR.H. Binder, P. Blood, M. Osinski, Y. Arakawa
Pages251-257
Number of pages7
Volume4646
DOIs
StatePublished - 2002
EventPhysics and Simulation of Optoelectronic Devices X - San Jose, CA, United States
Duration: Jan 21 2002Jan 25 2002

Other

OtherPhysics and Simulation of Optoelectronic Devices X
CountryUnited States
CitySan Jose, CA
Period1/21/021/25/02

Fingerprint

Semiconductor lasers
Photoluminescence
Optical properties
semiconductor lasers
Electric fields
luminescence
photoluminescence
optical properties
electric fields
laser materials
Electric space charge
Semiconductor quantum wells
Luminescence
space charge
Doping (additives)
quantum wells
Wavelength
shift
wavelengths
excitation

Keywords

  • Absorption
  • Gain
  • GaInAs
  • Photo luminescence
  • Semiconductor laser

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Condensed Matter Physics

Cite this

Hader, J., Koch, S. W., Zakharian, A. R., Moloney, J. V., Ehret, J. E., & Nelson, T. R. (2002). Gain and photo luminescence in semiconductor lasers. In R. H. Binder, P. Blood, M. Osinski, & Y. Arakawa (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (Vol. 4646, pp. 251-257) https://doi.org/10.1117/12.470523

Gain and photo luminescence in semiconductor lasers. / Hader, Jorg; Koch, Stephan W; Zakharian, A. R.; Moloney, Jerome V; Ehret, J. E.; Nelson, T. R.

Proceedings of SPIE - The International Society for Optical Engineering. ed. / R.H. Binder; P. Blood; M. Osinski; Y. Arakawa. Vol. 4646 2002. p. 251-257.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Hader, J, Koch, SW, Zakharian, AR, Moloney, JV, Ehret, JE & Nelson, TR 2002, Gain and photo luminescence in semiconductor lasers. in RH Binder, P Blood, M Osinski & Y Arakawa (eds), Proceedings of SPIE - The International Society for Optical Engineering. vol. 4646, pp. 251-257, Physics and Simulation of Optoelectronic Devices X, San Jose, CA, United States, 1/21/02. https://doi.org/10.1117/12.470523
Hader J, Koch SW, Zakharian AR, Moloney JV, Ehret JE, Nelson TR. Gain and photo luminescence in semiconductor lasers. In Binder RH, Blood P, Osinski M, Arakawa Y, editors, Proceedings of SPIE - The International Society for Optical Engineering. Vol. 4646. 2002. p. 251-257 https://doi.org/10.1117/12.470523
Hader, Jorg ; Koch, Stephan W ; Zakharian, A. R. ; Moloney, Jerome V ; Ehret, J. E. ; Nelson, T. R. / Gain and photo luminescence in semiconductor lasers. Proceedings of SPIE - The International Society for Optical Engineering. editor / R.H. Binder ; P. Blood ; M. Osinski ; Y. Arakawa. Vol. 4646 2002. pp. 251-257
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