Gain and photoluminescence dynamics in dilute nitride semiconductor laser materials

A. Thranhardt, C. Schlichenmaier, S. Becker, K. Hantke, J. D. Heber, W. W. Rühle, S. W. Koch, J. Hader, J. V. Moloney, W. W. Chow

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The gain and photoluminescence dynamics is calculated microscopically for several GalnNAs structures. Carrier scattering rates are computed microscopically and implemented into a nonequilibrium gain model.

Original languageEnglish (US)
Title of host publicationConference on Lasers and Electro-Optics, CLEO 2006
PublisherOptical Society of America
ISBN (Print)1557528136, 9781557528131
StatePublished - Jan 1 2006
EventConference on Lasers and Electro-Optics, CLEO 2006 - Long Beach, CA, United States
Duration: May 21 2006May 21 2006

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Other

OtherConference on Lasers and Electro-Optics, CLEO 2006
CountryUnited States
CityLong Beach, CA
Period5/21/065/21/06

ASJC Scopus subject areas

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

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  • Cite this

    Thranhardt, A., Schlichenmaier, C., Becker, S., Hantke, K., Heber, J. D., Rühle, W. W., Koch, S. W., Hader, J., Moloney, J. V., & Chow, W. W. (2006). Gain and photoluminescence dynamics in dilute nitride semiconductor laser materials. In Conference on Lasers and Electro-Optics, CLEO 2006 (Optics InfoBase Conference Papers). Optical Society of America.