Gain and photoluminescence dynamics in dilute nitride semiconductor laser materials

A. Thranhardt, C. Schlichenmaier, S. Becker, K. Hantke, J. D. Heber, W. W. Rühle, S. W. Koch, J. Hader, J. V. Moloney, W. W. Chow

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The gain and photoluminescence dynamics is calculated microscopically for several GalnNAs structures. Carrier scattering rates are computed microscopically and implemented into a nonequilibrium gain model.

Original languageEnglish (US)
Title of host publicationConference on Lasers and Electro-Optics, CLEO 2005
PublisherOptical Society of America
ISBN (Print)1557527709, 9781557527707
StatePublished - Jan 1 2005
EventConference on Lasers and Electro-Optics, CLEO 2005 - Baltimore, MD, United States
Duration: May 22 2005May 22 2005

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Other

OtherConference on Lasers and Electro-Optics, CLEO 2005
CountryUnited States
CityBaltimore, MD
Period5/22/055/22/05

ASJC Scopus subject areas

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

Fingerprint Dive into the research topics of 'Gain and photoluminescence dynamics in dilute nitride semiconductor laser materials'. Together they form a unique fingerprint.

  • Cite this

    Thranhardt, A., Schlichenmaier, C., Becker, S., Hantke, K., Heber, J. D., Rühle, W. W., Koch, S. W., Hader, J., Moloney, J. V., & Chow, W. W. (2005). Gain and photoluminescence dynamics in dilute nitride semiconductor laser materials. In Conference on Lasers and Electro-Optics, CLEO 2005 (Optics InfoBase Conference Papers). Optical Society of America.