Gain in 1.3 μm materials: InGaNAs and InGaPAs semiconductor quantum-well lasers

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Abstract

The absorption and gain for an InGaNAs/GaAs quantum-well structure is calculated and compared to that of a more conventional InGaAs/InGaPAs structure, both lasing in the 1.3 μm range. Despite significant differences in the band structures, the gain value is comparable for high carrier densities in both structures and the transition energy at the gain maximum shows a similar blueshift with increasing carrier density. For low and intermediate carrier densities, the calculated gain in the InGaPAs system is significantly lower and the bandwidth smaller than in the InGaNAs system.

Original languageEnglish (US)
Pages (from-to)630-632
Number of pages3
JournalApplied Physics Letters
Volume77
Issue number5
StatePublished - Jul 31 2000

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quantum well lasers
semiconductor lasers
lasing
quantum wells
bandwidth
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Gain in 1.3 μm materials : InGaNAs and InGaPAs semiconductor quantum-well lasers. / Hader, Jorg; Koch, Stephan W; Moloney, Jerome V; O'Reilly, E. P.

In: Applied Physics Letters, Vol. 77, No. 5, 31.07.2000, p. 630-632.

Research output: Contribution to journalArticle

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