Gain in 1310-nm materials: InGaNAs and InGaPAs semiconductor quantum well lasers

Research output: Contribution to conferencePaper

Abstract

A comparative study of two semiconductor quantum well laser structures is reported. The structures include a 6-nm Inv0.3Ga0.7N0.02As0.98 quantum well between 30-nm GaAs barriers and Al0.3Ga0.7As cladding layers and an unstrained 6-nm In0.53Ga0.47As quantum well, between lattice-matched 30-nm In0.9Ga0.1P0.78As0.22 barriers and InP cladding layers. Band-structure is calculated with a k·p model.

Original languageEnglish (US)
Pages390-391
Number of pages2
StatePublished - Dec 1 2000
EventConference on Lasers and Electro-Optics (CLEO 2000) - San Francisco, CA, USA
Duration: May 7 2000May 12 2000

Other

OtherConference on Lasers and Electro-Optics (CLEO 2000)
CitySan Francisco, CA, USA
Period5/7/005/12/00

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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  • Cite this

    Hader, J., Koch, S. W., Moloney, J. V., & O'Reilly, E. P. (2000). Gain in 1310-nm materials: InGaNAs and InGaPAs semiconductor quantum well lasers. 390-391. Paper presented at Conference on Lasers and Electro-Optics (CLEO 2000), San Francisco, CA, USA, .