Gain in 1310-nm materials: InGaNAs and InGaPAs semiconductor quantum well lasers

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

A comparative study of two semiconductor quantum well laser structures is reported. The structures include a 6-nm Inv0.3Ga0.7N0.02As0.98 quantum well between 30-nm GaAs barriers and Al0.3Ga0.7As cladding layers and an unstrained 6-nm In0.53Ga0.47As quantum well, between lattice-matched 30-nm In0.9Ga0.1P0.78As0.22 barriers and InP cladding layers. Band-structure is calculated with a k·p model.

Original languageEnglish (US)
Title of host publicationPacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest
PublisherIEEE
Pages390-391
Number of pages2
StatePublished - 2000
Externally publishedYes
EventConference on Lasers and Electro-Optics (CLEO 2000) - San Francisco, CA, USA
Duration: May 7 2000May 12 2000

Other

OtherConference on Lasers and Electro-Optics (CLEO 2000)
CitySan Francisco, CA, USA
Period5/7/005/12/00

Fingerprint

quantum well lasers
semiconductor lasers
quantum wells

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Hader, J., Koch, S. W., Moloney, J. V., & O'Reilly, E. P. (2000). Gain in 1310-nm materials: InGaNAs and InGaPAs semiconductor quantum well lasers. In Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest (pp. 390-391). IEEE.

Gain in 1310-nm materials : InGaNAs and InGaPAs semiconductor quantum well lasers. / Hader, Jorg; Koch, Stephan W; Moloney, Jerome V; O'Reilly, E. P.

Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest. IEEE, 2000. p. 390-391.

Research output: Chapter in Book/Report/Conference proceedingChapter

Hader, J, Koch, SW, Moloney, JV & O'Reilly, EP 2000, Gain in 1310-nm materials: InGaNAs and InGaPAs semiconductor quantum well lasers. in Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest. IEEE, pp. 390-391, Conference on Lasers and Electro-Optics (CLEO 2000), San Francisco, CA, USA, 5/7/00.
Hader J, Koch SW, Moloney JV, O'Reilly EP. Gain in 1310-nm materials: InGaNAs and InGaPAs semiconductor quantum well lasers. In Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest. IEEE. 2000. p. 390-391
Hader, Jorg ; Koch, Stephan W ; Moloney, Jerome V ; O'Reilly, E. P. / Gain in 1310-nm materials : InGaNAs and InGaPAs semiconductor quantum well lasers. Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest. IEEE, 2000. pp. 390-391
@inbook{7cdb8c3791ad40279676ed34b2fd6e9b,
title = "Gain in 1310-nm materials: InGaNAs and InGaPAs semiconductor quantum well lasers",
abstract = "A comparative study of two semiconductor quantum well laser structures is reported. The structures include a 6-nm Inv0.3Ga0.7N0.02As0.98 quantum well between 30-nm GaAs barriers and Al0.3Ga0.7As cladding layers and an unstrained 6-nm In0.53Ga0.47As quantum well, between lattice-matched 30-nm In0.9Ga0.1P0.78As0.22 barriers and InP cladding layers. Band-structure is calculated with a k·p model.",
author = "Jorg Hader and Koch, {Stephan W} and Moloney, {Jerome V} and O'Reilly, {E. P.}",
year = "2000",
language = "English (US)",
pages = "390--391",
booktitle = "Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest",
publisher = "IEEE",

}

TY - CHAP

T1 - Gain in 1310-nm materials

T2 - InGaNAs and InGaPAs semiconductor quantum well lasers

AU - Hader, Jorg

AU - Koch, Stephan W

AU - Moloney, Jerome V

AU - O'Reilly, E. P.

PY - 2000

Y1 - 2000

N2 - A comparative study of two semiconductor quantum well laser structures is reported. The structures include a 6-nm Inv0.3Ga0.7N0.02As0.98 quantum well between 30-nm GaAs barriers and Al0.3Ga0.7As cladding layers and an unstrained 6-nm In0.53Ga0.47As quantum well, between lattice-matched 30-nm In0.9Ga0.1P0.78As0.22 barriers and InP cladding layers. Band-structure is calculated with a k·p model.

AB - A comparative study of two semiconductor quantum well laser structures is reported. The structures include a 6-nm Inv0.3Ga0.7N0.02As0.98 quantum well between 30-nm GaAs barriers and Al0.3Ga0.7As cladding layers and an unstrained 6-nm In0.53Ga0.47As quantum well, between lattice-matched 30-nm In0.9Ga0.1P0.78As0.22 barriers and InP cladding layers. Band-structure is calculated with a k·p model.

UR - http://www.scopus.com/inward/record.url?scp=0034547447&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034547447&partnerID=8YFLogxK

M3 - Chapter

AN - SCOPUS:0034547447

SP - 390

EP - 391

BT - Pacific Rim Conference on Lasers and Electro-Optics, CLEO - Technical Digest

PB - IEEE

ER -