Gain of blue and cyan InGaN laser diodes

T. Lermer, A. Gomez-Iglesias, M. Sabathil, J. Müller, S. Lutgen, U. Strauss, B. Pasenow, Jorg Hader, Jerome V Moloney, Stephan W Koch, W. Scheibenzuber, U. T. Schwarz

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

Experimental gain spectra of 450 and 490 nm laser diodes on c-plane GaN are analyzed by detailed comparison with the results of a fully microscopic theory. The gain calculation shows the importance of electron LO-phonon coupling. The whole spectral gain shape, not only the low energy tail, is strongly influenced by the LO-phonon contribution. The inhomogeneous broadening parameter increases by a factor of about two for the cyan laser diode in comparison with the blue laser structure. This indicates an increase in alloy and thickness fluctuations for the longer wavelength material.

Original languageEnglish (US)
Article number021115
JournalApplied Physics Letters
Volume98
Issue number2
DOIs
StatePublished - Jan 10 2011

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semiconductor lasers
wavelengths
lasers
electrons
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Lermer, T., Gomez-Iglesias, A., Sabathil, M., Müller, J., Lutgen, S., Strauss, U., ... Schwarz, U. T. (2011). Gain of blue and cyan InGaN laser diodes. Applied Physics Letters, 98(2), [021115]. https://doi.org/10.1063/1.3541785

Gain of blue and cyan InGaN laser diodes. / Lermer, T.; Gomez-Iglesias, A.; Sabathil, M.; Müller, J.; Lutgen, S.; Strauss, U.; Pasenow, B.; Hader, Jorg; Moloney, Jerome V; Koch, Stephan W; Scheibenzuber, W.; Schwarz, U. T.

In: Applied Physics Letters, Vol. 98, No. 2, 021115, 10.01.2011.

Research output: Contribution to journalArticle

Lermer, T, Gomez-Iglesias, A, Sabathil, M, Müller, J, Lutgen, S, Strauss, U, Pasenow, B, Hader, J, Moloney, JV, Koch, SW, Scheibenzuber, W & Schwarz, UT 2011, 'Gain of blue and cyan InGaN laser diodes', Applied Physics Letters, vol. 98, no. 2, 021115. https://doi.org/10.1063/1.3541785
Lermer T, Gomez-Iglesias A, Sabathil M, Müller J, Lutgen S, Strauss U et al. Gain of blue and cyan InGaN laser diodes. Applied Physics Letters. 2011 Jan 10;98(2). 021115. https://doi.org/10.1063/1.3541785
Lermer, T. ; Gomez-Iglesias, A. ; Sabathil, M. ; Müller, J. ; Lutgen, S. ; Strauss, U. ; Pasenow, B. ; Hader, Jorg ; Moloney, Jerome V ; Koch, Stephan W ; Scheibenzuber, W. ; Schwarz, U. T. / Gain of blue and cyan InGaN laser diodes. In: Applied Physics Letters. 2011 ; Vol. 98, No. 2.
@article{73ec2d9473e44901893b0e7b922f7d74,
title = "Gain of blue and cyan InGaN laser diodes",
abstract = "Experimental gain spectra of 450 and 490 nm laser diodes on c-plane GaN are analyzed by detailed comparison with the results of a fully microscopic theory. The gain calculation shows the importance of electron LO-phonon coupling. The whole spectral gain shape, not only the low energy tail, is strongly influenced by the LO-phonon contribution. The inhomogeneous broadening parameter increases by a factor of about two for the cyan laser diode in comparison with the blue laser structure. This indicates an increase in alloy and thickness fluctuations for the longer wavelength material.",
author = "T. Lermer and A. Gomez-Iglesias and M. Sabathil and J. M{\"u}ller and S. Lutgen and U. Strauss and B. Pasenow and Jorg Hader and Moloney, {Jerome V} and Koch, {Stephan W} and W. Scheibenzuber and Schwarz, {U. T.}",
year = "2011",
month = "1",
day = "10",
doi = "10.1063/1.3541785",
language = "English (US)",
volume = "98",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "2",

}

TY - JOUR

T1 - Gain of blue and cyan InGaN laser diodes

AU - Lermer, T.

AU - Gomez-Iglesias, A.

AU - Sabathil, M.

AU - Müller, J.

AU - Lutgen, S.

AU - Strauss, U.

AU - Pasenow, B.

AU - Hader, Jorg

AU - Moloney, Jerome V

AU - Koch, Stephan W

AU - Scheibenzuber, W.

AU - Schwarz, U. T.

PY - 2011/1/10

Y1 - 2011/1/10

N2 - Experimental gain spectra of 450 and 490 nm laser diodes on c-plane GaN are analyzed by detailed comparison with the results of a fully microscopic theory. The gain calculation shows the importance of electron LO-phonon coupling. The whole spectral gain shape, not only the low energy tail, is strongly influenced by the LO-phonon contribution. The inhomogeneous broadening parameter increases by a factor of about two for the cyan laser diode in comparison with the blue laser structure. This indicates an increase in alloy and thickness fluctuations for the longer wavelength material.

AB - Experimental gain spectra of 450 and 490 nm laser diodes on c-plane GaN are analyzed by detailed comparison with the results of a fully microscopic theory. The gain calculation shows the importance of electron LO-phonon coupling. The whole spectral gain shape, not only the low energy tail, is strongly influenced by the LO-phonon contribution. The inhomogeneous broadening parameter increases by a factor of about two for the cyan laser diode in comparison with the blue laser structure. This indicates an increase in alloy and thickness fluctuations for the longer wavelength material.

UR - http://www.scopus.com/inward/record.url?scp=78751507480&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78751507480&partnerID=8YFLogxK

U2 - 10.1063/1.3541785

DO - 10.1063/1.3541785

M3 - Article

VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 2

M1 - 021115

ER -