Gain spectra of an (InGa)as single quantum well laser diode

C. Ellmers; M. Hofmann; W. W. Rühle; A. Girndt; F. Jahnke; W. W. Chow; A. Knorr; S. W. Koch; C. Hanke; L. Korte; C. Hoyler

doi:10.1002/(SICI)1521-3951(199803)206:1<407::AID-PSSB407>3.0.CO;2-X

Gain spectra of an (InGa)as single quantum well laser diode

C. Ellmers, M. Hofmann, W. W. Rühle, A. Girndt, F. Jahnke, W. W. Chow, A. Knorr, S. W. Koch, C. Hanke, L. Korte, C. Hoyler

Optical Sciences, College of

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

A new method using the broad spectrum of a 10 fs Ti: sapphire laser is demonstrated for measuring the gain spectra of semiconductor lasers with high and quantitative accuracy. Results are shown for an edge-emitting ridge-waveguide In_0.05Ga_0.95As single quantum well (SQW) laser. The device is studied from the absorption regime up to the strong gain regime recording both, TE and TM polarizations. The experiments are compared to the predictions of a microscopic model based on the semiconductor Bloch equations including microscopic scattering and dephasing terms. A very good quantitative agreement is obtained.

Original language	English (US)
Pages (from-to)	407-412
Number of pages	6
Journal	Physica Status Solidi (B) Basic Research
Volume	206
Issue number	1
DOIs	https://doi.org/10.1002/(SICI)1521-3951(199803)206:1<407::AID-PSSB407>3.0.CO;2-X
State	Published - Mar 1998

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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title = "Gain spectra of an (InGa)as single quantum well laser diode",

abstract = "A new method using the broad spectrum of a 10 fs Ti: sapphire laser is demonstrated for measuring the gain spectra of semiconductor lasers with high and quantitative accuracy. Results are shown for an edge-emitting ridge-waveguide In0.05Ga0.95As single quantum well (SQW) laser. The device is studied from the absorption regime up to the strong gain regime recording both, TE and TM polarizations. The experiments are compared to the predictions of a microscopic model based on the semiconductor Bloch equations including microscopic scattering and dephasing terms. A very good quantitative agreement is obtained.",

author = "C. Ellmers and M. Hofmann and R{\"u}hle, {W. W.} and A. Girndt and F. Jahnke and Chow, {W. W.} and A. Knorr and Koch, {S. W.} and C. Hanke and L. Korte and C. Hoyler",

year = "1998",

month = mar,

doi = "10.1002/(SICI)1521-3951(199803)206:1<407::AID-PSSB407>3.0.CO;2-X",

language = "English (US)",

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T1 - Gain spectra of an (InGa)as single quantum well laser diode

AU - Ellmers, C.

AU - Hofmann, M.

AU - Rühle, W. W.

AU - Girndt, A.

AU - Jahnke, F.

AU - Chow, W. W.

AU - Knorr, A.

AU - Koch, S. W.

AU - Hanke, C.

AU - Korte, L.

AU - Hoyler, C.

PY - 1998/3

Y1 - 1998/3

N2 - A new method using the broad spectrum of a 10 fs Ti: sapphire laser is demonstrated for measuring the gain spectra of semiconductor lasers with high and quantitative accuracy. Results are shown for an edge-emitting ridge-waveguide In0.05Ga0.95As single quantum well (SQW) laser. The device is studied from the absorption regime up to the strong gain regime recording both, TE and TM polarizations. The experiments are compared to the predictions of a microscopic model based on the semiconductor Bloch equations including microscopic scattering and dephasing terms. A very good quantitative agreement is obtained.

AB - A new method using the broad spectrum of a 10 fs Ti: sapphire laser is demonstrated for measuring the gain spectra of semiconductor lasers with high and quantitative accuracy. Results are shown for an edge-emitting ridge-waveguide In0.05Ga0.95As single quantum well (SQW) laser. The device is studied from the absorption regime up to the strong gain regime recording both, TE and TM polarizations. The experiments are compared to the predictions of a microscopic model based on the semiconductor Bloch equations including microscopic scattering and dephasing terms. A very good quantitative agreement is obtained.

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