Gain spectra of (Galn)(NAs) laser diodes for the 1.3-μm-wavelength regime

M. Hofmann, A. Wagner, C. Ellmers, C. Schlichenmeier, S. Schäfer, F. Höhnsdorf, J. Koch, W. Stolz, S. W. Koch, W. W. Rühle, J. Hader, J. V. Moloney, E. P. O'Reilly, B. Borchert, A. Yu Egorov, H. Riechert

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Abstract

Optical gain spectra of (Galn)(NAs)/GaAs quantum-well lasers operating in the 1.3-μm-emission-wavelength regime are measured and compared to those of a commercial (Galn)(AsP)/InP structure. Good agreement of the experimental results with computed spectra of a microscopic many-body theory is obtained. Due to the contributions of a second confined subband, a spectrally broad gain region is expected for (Galn)(NAs)/GaAs at elevated carrier densities.

Original languageEnglish (US)
Pages (from-to)3009-3011
Number of pages3
JournalApplied Physics Letters
Volume78
Issue number20
DOIs
StatePublished - May 14 2001

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Hofmann, M., Wagner, A., Ellmers, C., Schlichenmeier, C., Schäfer, S., Höhnsdorf, F., Koch, J., Stolz, W., Koch, S. W., Rühle, W. W., Hader, J., Moloney, J. V., O'Reilly, E. P., Borchert, B., Egorov, A. Y., & Riechert, H. (2001). Gain spectra of (Galn)(NAs) laser diodes for the 1.3-μm-wavelength regime. Applied Physics Letters, 78(20), 3009-3011. https://doi.org/10.1063/1.1371963