Gain spectroscopy of a type-II VECSEL chip

C. Lammers, M. Stein, C. Berger, C. Möller, C. Fuchs, A. Ruiz Perez, A. Rahimi-Iman, J. Hader, J. V. Moloney, W. Stolz, S. W. Koch, M. Koch

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Abstract

Using optical pump-white light probe spectroscopy, the gain dynamics is investigated for a vertical-external-cavity surface-emitting laser chip, which is based on a type-II heterostructure. The active region of the chip consists of a GaAs/(GaIn)As/Ga(AsSb)/(GaIn)As/GaAs multiple quantum well. For this structure, a fully microscopic theory predicts a modal room temperature gain at a wavelength of 1170 nm, which is confirmed by the experimental spectra. The results show a gain buildup on the type-II chip that is delayed relative to that of a type-I chip. This slower gain dynamics is attributed to a diminished cooling rate arising from the reduced electron-hole scattering.

Original languageEnglish (US)
Article number232107
JournalApplied Physics Letters
Volume109
Issue number23
DOIs
StatePublished - Dec 5 2016

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Lammers, C., Stein, M., Berger, C., Möller, C., Fuchs, C., Ruiz Perez, A., Rahimi-Iman, A., Hader, J., Moloney, J. V., Stolz, W., Koch, S. W., & Koch, M. (2016). Gain spectroscopy of a type-II VECSEL chip. Applied Physics Letters, 109(23), [232107]. https://doi.org/10.1063/1.4971333