GaInP/AIGaInP 670nm singlemode DBR laser

B. Pezeshki, J. S. Osinski, H. Zhao, A. Mathur, Thomas L Koch

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

The first singlemode room temperature AlGaInP monolithically frequency-stabilised lasers are reported. Single frequency and single spatial mode operation is obtained using a second order diffraction grating to stabilise the operating wavelength. The device produced < 20mW CW with a differential efficiency of 0.18W/A and a sidemode suppression ratio of < 30dB.

Original languageEnglish (US)
Pages (from-to)2241-2243
Number of pages3
JournalElectronics Letters
Volume32
Issue number24
StatePublished - 1996
Externally publishedYes

Fingerprint

DBR lasers
Diffraction gratings
Wavelength
Lasers
Temperature

Keywords

  • Distributed Bragg reflector lasers
  • Laser frequency stability

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Pezeshki, B., Osinski, J. S., Zhao, H., Mathur, A., & Koch, T. L. (1996). GaInP/AIGaInP 670nm singlemode DBR laser. Electronics Letters, 32(24), 2241-2243.

GaInP/AIGaInP 670nm singlemode DBR laser. / Pezeshki, B.; Osinski, J. S.; Zhao, H.; Mathur, A.; Koch, Thomas L.

In: Electronics Letters, Vol. 32, No. 24, 1996, p. 2241-2243.

Research output: Contribution to journalArticle

Pezeshki, B, Osinski, JS, Zhao, H, Mathur, A & Koch, TL 1996, 'GaInP/AIGaInP 670nm singlemode DBR laser', Electronics Letters, vol. 32, no. 24, pp. 2241-2243.
Pezeshki B, Osinski JS, Zhao H, Mathur A, Koch TL. GaInP/AIGaInP 670nm singlemode DBR laser. Electronics Letters. 1996;32(24):2241-2243.
Pezeshki, B. ; Osinski, J. S. ; Zhao, H. ; Mathur, A. ; Koch, Thomas L. / GaInP/AIGaInP 670nm singlemode DBR laser. In: Electronics Letters. 1996 ; Vol. 32, No. 24. pp. 2241-2243.
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