Galvanic corrosion between copper and tantalum under CMP conditions

Subramanian Tamilmani, Wayne Huang, Srini Raghavan

Research output: Contribution to journalArticlepeer-review

26 Scopus citations

Abstract

Chemical mechanical planarization (CMP) has emerged as the most viable method to planarize copper thin films during fabrication of integrated circuits. The final stage of copper CMP requires the simultaneous polishing of copper and the barrier metal, where the metals are prone to galvanic corrosion due to exposure to slurry. In this study, the extent of galvanic corrosion between copper and tantalum was estimated using electrochemical polarization measurements. A novel setup was designed to make direct measurement of the galvanic current between copper and tantalum and was successfully used to measure galvanic current in two different chemical systems. Galvanic corrosion current values obtained from polarization and direct measurements are compared and their implications during barrier polishing are discussed.

Original languageEnglish (US)
Pages (from-to)F53-F59
JournalJournal of the Electrochemical Society
Volume153
Issue number4
DOIs
StatePublished - Apr 1 2006

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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