Galvanic corrosion characteristics of poly silicon-tantalum nitride couple immersed in dilute HF solutions

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Abstract

Galvanic corrosion characteristics between poly-Si and tantalum nitride (TaN) in dilute HF solutions (0.1 to 1%) have been investigated. Variables such as poly-Si to TaN area ratio, dissolved oxygen concentration in HF solutions and doping level of poly-Si were investigated. Extent of galvanic corrosion was directly measured as well as estimated using Tafel polarization. Morphological changes on poly-Si due to galvanic corrosion were characterized using Scanning Electron Microscopy. Increase in exposed cathode (TaN) area as well as aeration results in higher corrosion of poly-Si. In de-oxygenated HF solutions (less than 4 ppm of O2), irrespective of the area ratio, there appears to be no significant silicon loss.

Original languageEnglish (US)
Pages (from-to)390-396
Number of pages7
JournalMaterials Science in Semiconductor Processing
Volume27
Issue number1
DOIs
StatePublished - 2014

Fingerprint

tantalum nitrides
Tantalum
Silicon
Polysilicon
silicon nitrides
Nitrides
corrosion
Corrosion
aeration
Dissolved oxygen
nitrides
Cathodes
cathodes
Doping (additives)
Polarization
Scanning electron microscopy
scanning electron microscopy
silicon
oxygen
polarization

Keywords

  • Dopant concentration
  • Galvanic corrosion
  • HF solution
  • Poly-Si
  • Tantalum nitride

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering
  • Mechanics of Materials

Cite this

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title = "Galvanic corrosion characteristics of poly silicon-tantalum nitride couple immersed in dilute HF solutions",
abstract = "Galvanic corrosion characteristics between poly-Si and tantalum nitride (TaN) in dilute HF solutions (0.1 to 1{\%}) have been investigated. Variables such as poly-Si to TaN area ratio, dissolved oxygen concentration in HF solutions and doping level of poly-Si were investigated. Extent of galvanic corrosion was directly measured as well as estimated using Tafel polarization. Morphological changes on poly-Si due to galvanic corrosion were characterized using Scanning Electron Microscopy. Increase in exposed cathode (TaN) area as well as aeration results in higher corrosion of poly-Si. In de-oxygenated HF solutions (less than 4 ppm of O2), irrespective of the area ratio, there appears to be no significant silicon loss.",
keywords = "Dopant concentration, Galvanic corrosion, HF solution, Poly-Si, Tantalum nitride",
author = "R. Govindarajan and Keswani, {Manish K} and Srini Raghavan",
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TY - JOUR

T1 - Galvanic corrosion characteristics of poly silicon-tantalum nitride couple immersed in dilute HF solutions

AU - Govindarajan, R.

AU - Keswani, Manish K

AU - Raghavan, Srini

PY - 2014

Y1 - 2014

N2 - Galvanic corrosion characteristics between poly-Si and tantalum nitride (TaN) in dilute HF solutions (0.1 to 1%) have been investigated. Variables such as poly-Si to TaN area ratio, dissolved oxygen concentration in HF solutions and doping level of poly-Si were investigated. Extent of galvanic corrosion was directly measured as well as estimated using Tafel polarization. Morphological changes on poly-Si due to galvanic corrosion were characterized using Scanning Electron Microscopy. Increase in exposed cathode (TaN) area as well as aeration results in higher corrosion of poly-Si. In de-oxygenated HF solutions (less than 4 ppm of O2), irrespective of the area ratio, there appears to be no significant silicon loss.

AB - Galvanic corrosion characteristics between poly-Si and tantalum nitride (TaN) in dilute HF solutions (0.1 to 1%) have been investigated. Variables such as poly-Si to TaN area ratio, dissolved oxygen concentration in HF solutions and doping level of poly-Si were investigated. Extent of galvanic corrosion was directly measured as well as estimated using Tafel polarization. Morphological changes on poly-Si due to galvanic corrosion were characterized using Scanning Electron Microscopy. Increase in exposed cathode (TaN) area as well as aeration results in higher corrosion of poly-Si. In de-oxygenated HF solutions (less than 4 ppm of O2), irrespective of the area ratio, there appears to be no significant silicon loss.

KW - Dopant concentration

KW - Galvanic corrosion

KW - HF solution

KW - Poly-Si

KW - Tantalum nitride

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