Galvanic corrosion characteristics of poly silicon-tantalum nitride couple immersed in dilute HF solutions

R. Govindarajan, M. Keswani, S. Raghavan

Research output: Contribution to journalArticle

4 Scopus citations

Abstract

Galvanic corrosion characteristics between poly-Si and tantalum nitride (TaN) in dilute HF solutions (0.1 to 1%) have been investigated. Variables such as poly-Si to TaN area ratio, dissolved oxygen concentration in HF solutions and doping level of poly-Si were investigated. Extent of galvanic corrosion was directly measured as well as estimated using Tafel polarization. Morphological changes on poly-Si due to galvanic corrosion were characterized using Scanning Electron Microscopy. Increase in exposed cathode (TaN) area as well as aeration results in higher corrosion of poly-Si. In de-oxygenated HF solutions (less than 4 ppm of O2), irrespective of the area ratio, there appears to be no significant silicon loss.

Original languageEnglish (US)
Pages (from-to)390-396
Number of pages7
JournalMaterials Science in Semiconductor Processing
Volume27
Issue number1
DOIs
StatePublished - Nov 2014

Keywords

  • Dopant concentration
  • Galvanic corrosion
  • HF solution
  • Poly-Si
  • Tantalum nitride

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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