Gate dependent Raman spectroscopy of graphene on hexagonal boron nitride

Kanokporn Chattrakun, Shengqiang Huang, K. Watanabe, T. Taniguchi, A. Sandhu, B. J. Leroy

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

Raman spectroscopy, a fast and nondestructive imaging method, can be used to monitor the doping level in graphene devices. We fabricated chemical vapor deposition (CVD) grown graphene on atomically flat hexagonal boron nitride (hBN) flakes and SiO2 substrates. We compared their Raman response as a function of charge carrier density using an ion gel as a top gate. The G peak position, the 2D peak position, the 2D peak width and the ratio of the 2D peak area to the G peak area show a dependence on carrier density that differs for hBN compared to SiO2. Histograms of two-dimensional mapping are used to compare the fluctuations in the Raman peak properties between the two substrates. The hBN substrate has been found to produce fewer fluctuations at the same charge density owing to its atomically flat surface and reduced charged impurities.

Original languageEnglish (US)
Article number505304
JournalJournal of Physics Condensed Matter
Volume25
Issue number50
DOIs
StatePublished - Dec 18 2013

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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