Generation of terahertz radiation using semiconductor heterostructures

J. Steiner, M. Kira, S. W. Koch

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The interaction of semiconductors with terahertz radiation is discussed. The main ingredients of a consistent microscopic description are presented. The theory is evaluated to analyze direct terahertz emission features of semiconductor systems.

Original languageEnglish (US)
Title of host publicationPhysics and Simulation of Optoelectronic Devices XV
DOIs
StatePublished - May 22 2007
EventPhysics and Simulation of Optoelectronic Devices XV - San Jose, CA, United States
Duration: Jan 22 2007Jan 25 2007

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6468
ISSN (Print)0277-786X

Other

OtherPhysics and Simulation of Optoelectronic Devices XV
CountryUnited States
CitySan Jose, CA
Period1/22/071/25/07

Keywords

  • Optical properties
  • Semiconductors
  • Terahertz generation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Steiner, J., Kira, M., & Koch, S. W. (2007). Generation of terahertz radiation using semiconductor heterostructures. In Physics and Simulation of Optoelectronic Devices XV [64681R] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6468). https://doi.org/10.1117/12.723785