Grain boundary dynamics of SiC bicrystals under shear deformation

Stefan Bringuier, Venkateswara Rao Manga, Keith A Runge, Pierre A Deymier, Krishna Muralidharan

Research output: Contribution to journalArticle

7 Scopus citations

Abstract

The dynamics of SiC grain boundaries under shear are characterized using molecular dynamics simulations. At low-temperatures, low-angle grain boundaries exhibit stick-slip behavior due to athermal climb of edge dislocations along the grain boundary. With increasing temperature stick-slip becomes less pronounced due to dislocation glide, and at high-temperatures, structural disordering of the low-angle grain boundary inhibits stick-slip. In contrast, structural disordering of the high-angle grain boundary is induced under shear even at low temperatures, resulting in a significantly dampened stick-slip behavior.

Original languageEnglish (US)
Pages (from-to)161-166
Number of pages6
JournalMaterials Science and Engineering A
Volume634
DOIs
Publication statusPublished - May 4 2015

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Keywords

  • Athermal dislocation climb
  • Bicrystals
  • Silicon carbide
  • Slide-climb
  • Stick-slip

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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