Graphene on hexagonal boron nitride

Matthew Yankowitz, Jiamin Xue, B. J. Leroy

Research output: Contribution to journalReview article

57 Scopus citations

Abstract

The field of graphene research has developed rapidly since its first isolation by mechanical exfoliation in 2004. Due to the relativistic Dirac nature of its charge carriers, graphene is both a promising material for next-generation electronic devices and a convenient low-energy testbed for intrinsically high-energy physical phenomena. Both of these research branches require the facile fabrication of clean graphene devices so as not to obscure its intrinsic physical properties. Hexagonal boron nitride has emerged as a promising substrate for graphene devices as it is insulating, atomically flat and provides a clean charge environment for the graphene. Additionally, the interaction between graphene and boron nitride provides a path for the study of new physical phenomena not present in bare graphene devices. This review focuses on recent advancements in the study of graphene on hexagonal boron nitride devices from the perspective of scanning tunneling microscopy with highlights of some important results from electrical transport measurements.

Original languageEnglish (US)
Article number303201
JournalJournal of Physics Condensed Matter
Volume26
Issue number30
DOIs
StatePublished - Jul 30 2014

Keywords

  • boron nitride
  • graphene
  • scanning tunneling microscopy

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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