Green's function description of momentum-orientation relaxation of photoexcited electron plasmas in semiconductors

Rudolf Binder, H. S. Köhler, M. Bonitz, N. Kwong

Research output: Contribution to journalArticle

59 Citations (Scopus)

Abstract

We present numerical results for the momentum-orientation relaxation of optically excited electron plasmas in bulk semiconductors. Our results are based on the full two-time Green's function approach for carrier-carrier scattering and are compared to the results obtained within the conventional quantum Boltzmann equation. Defining "memory effects" by this comparison, we find memory effects mainly to be differences in the time-scale of the relaxation process rather than distinct qualitative features. Within the limitations of our isotropic static screening model, we find that, in both approaches, an initial anisotropic and nonmonotonic distribution function relaxes in a three-stage process in which the distribution becomes monotonic before it loses its anisotropy.

Original languageEnglish (US)
Pages (from-to)5110-5116
Number of pages7
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume55
Issue number8
StatePublished - Feb 15 1997

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electron plasma
Green's function
Crystal orientation
Momentum
Green's functions
Semiconductor materials
momentum
Plasmas
Data storage equipment
time functions
Electrons
Boltzmann equation
Relaxation processes
Distribution functions
Screening
Anisotropy
screening
distribution functions
Scattering
anisotropy

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Green's function description of momentum-orientation relaxation of photoexcited electron plasmas in semiconductors. / Binder, Rudolf; Köhler, H. S.; Bonitz, M.; Kwong, N.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 55, No. 8, 15.02.1997, p. 5110-5116.

Research output: Contribution to journalArticle

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