Growth and annealing of InAs quantum dots on pre-structured GaAs substrates

M. Helfrich; D. Z. Hu; J. Hendrickson; M. Gehl; D. Rülke; R. Gröger; D. Litvinov; S. Linden; M. Wegener; D. Gerthsen; T. Schimmel; M. Hetterich; H. Kalt; G. Khitrova; H. M. Gibbs; D. M. Schaadt

doi:10.1016/j.jcrysgro.2010.11.162

Growth and annealing of InAs quantum dots on pre-structured GaAs substrates

M. Helfrich, D. Z. Hu, J. Hendrickson, M. Gehl, D. Rülke, R. Gröger, D. Litvinov, S. Linden, M. Wegener, D. Gerthsen, T. Schimmel, M. Hetterich, H. Kalt, G. Khitrova, H. M. Gibbs, D. M. Schaadt

Optical Sciences, College of

Research output: Contribution to journal › Article

12 Scopus citations

Abstract

In this study, we investigated the effect of in situ annealing on InAs quantum dots site-selectively grown on pre-structured GaAs substrates. A morphological transition is observed with original double dots merging into one single dot during annealing. This is accompanied by a reduction of quantum dots originally nucleating between defined sites. The photoluminescence intensity of annealed site-selective quantum dots is compared to annealed self-assembled dots with linewidths of single dot emission of about 170 and 81μeV, respectively. UV-ozone cleaning is used to optimize the sample cleaning prior to quantum dot growth.

Original language	English (US)
Pages (from-to)	187-190
Number of pages	4
Journal	Journal of Crystal Growth
Volume	323
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2010.11.162
State	Published - May 15 2011

Keywords

In situ annealing
Molecular beam epitaxy
Patterning
Quantum dots
Site-selective growth

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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Helfrich, M., Hu, D. Z., Hendrickson, J., Gehl, M., Rülke, D., Gröger, R., Litvinov, D., Linden, S., Wegener, M., Gerthsen, D., Schimmel, T., Hetterich, M., Kalt, H., Khitrova, G., Gibbs, H. M., & Schaadt, D. M. (2011). Growth and annealing of InAs quantum dots on pre-structured GaAs substrates. Journal of Crystal Growth, 323(1), 187-190. https://doi.org/10.1016/j.jcrysgro.2010.11.162

Growth and annealing of InAs quantum dots on pre-structured GaAs substrates. / Helfrich, M.; Hu, D. Z.; Hendrickson, J.; Gehl, M.; Rülke, D.; Gröger, R.; Litvinov, D.; Linden, S.; Wegener, M.; Gerthsen, D.; Schimmel, T.; Hetterich, M.; Kalt, H.; Khitrova, G.; Gibbs, H. M.; Schaadt, D. M.

In: Journal of Crystal Growth, Vol. 323, No. 1, 15.05.2011, p. 187-190.

Research output: Contribution to journal › Article

Helfrich, M, Hu, DZ, Hendrickson, J, Gehl, M, Rülke, D, Gröger, R, Litvinov, D, Linden, S, Wegener, M, Gerthsen, D, Schimmel, T, Hetterich, M, Kalt, H, Khitrova, G, Gibbs, HM & Schaadt, DM 2011, 'Growth and annealing of InAs quantum dots on pre-structured GaAs substrates', Journal of Crystal Growth, vol. 323, no. 1, pp. 187-190. https://doi.org/10.1016/j.jcrysgro.2010.11.162

Helfrich, M. ; Hu, D. Z. ; Hendrickson, J. ; Gehl, M. ; Rülke, D. ; Gröger, R. ; Litvinov, D. ; Linden, S. ; Wegener, M. ; Gerthsen, D. ; Schimmel, T. ; Hetterich, M. ; Kalt, H. ; Khitrova, G. ; Gibbs, H. M. ; Schaadt, D. M. / Growth and annealing of InAs quantum dots on pre-structured GaAs substrates. In: Journal of Crystal Growth. 2011 ; Vol. 323, No. 1. pp. 187-190.

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abstract = "In this study, we investigated the effect of in situ annealing on InAs quantum dots site-selectively grown on pre-structured GaAs substrates. A morphological transition is observed with original double dots merging into one single dot during annealing. This is accompanied by a reduction of quantum dots originally nucleating between defined sites. The photoluminescence intensity of annealed site-selective quantum dots is compared to annealed self-assembled dots with linewidths of single dot emission of about 170 and 81μeV, respectively. UV-ozone cleaning is used to optimize the sample cleaning prior to quantum dot growth.",

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AU - Gröger, R.

AU - Litvinov, D.

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AU - Wegener, M.

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AU - Schimmel, T.

AU - Hetterich, M.

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