Abstract
In this study, we investigated the effect of in situ annealing on InAs quantum dots site-selectively grown on pre-structured GaAs substrates. A morphological transition is observed with original double dots merging into one single dot during annealing. This is accompanied by a reduction of quantum dots originally nucleating between defined sites. The photoluminescence intensity of annealed site-selective quantum dots is compared to annealed self-assembled dots with linewidths of single dot emission of about 170 and 81μeV, respectively. UV-ozone cleaning is used to optimize the sample cleaning prior to quantum dot growth.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 187-190 |
| Number of pages | 4 |
| Journal | Journal of Crystal Growth |
| Volume | 323 |
| Issue number | 1 |
| DOIs | |
| State | Published - May 15 2011 |
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Keywords
- In situ annealing
- Molecular beam epitaxy
- Patterning
- Quantum dots
- Site-selective growth
ASJC Scopus subject areas
- Condensed Matter Physics
- Materials Chemistry
- Inorganic Chemistry
Cite this
Growth and annealing of InAs quantum dots on pre-structured GaAs substrates. / Helfrich, M.; Hu, D. Z.; Hendrickson, J.; Gehl, M.; Rülke, D.; Gröger, R.; Litvinov, D.; Linden, S.; Wegener, M.; Gerthsen, D.; Schimmel, T.; Hetterich, M.; Kalt, H.; Khitrova, Galina; Gibbs, H. M.; Schaadt, D. M.
In: Journal of Crystal Growth, Vol. 323, No. 1, 15.05.2011, p. 187-190.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Growth and annealing of InAs quantum dots on pre-structured GaAs substrates
AU - Helfrich, M.
AU - Hu, D. Z.
AU - Hendrickson, J.
AU - Gehl, M.
AU - Rülke, D.
AU - Gröger, R.
AU - Litvinov, D.
AU - Linden, S.
AU - Wegener, M.
AU - Gerthsen, D.
AU - Schimmel, T.
AU - Hetterich, M.
AU - Kalt, H.
AU - Khitrova, Galina
AU - Gibbs, H. M.
AU - Schaadt, D. M.
PY - 2011/5/15
Y1 - 2011/5/15
N2 - In this study, we investigated the effect of in situ annealing on InAs quantum dots site-selectively grown on pre-structured GaAs substrates. A morphological transition is observed with original double dots merging into one single dot during annealing. This is accompanied by a reduction of quantum dots originally nucleating between defined sites. The photoluminescence intensity of annealed site-selective quantum dots is compared to annealed self-assembled dots with linewidths of single dot emission of about 170 and 81μeV, respectively. UV-ozone cleaning is used to optimize the sample cleaning prior to quantum dot growth.
AB - In this study, we investigated the effect of in situ annealing on InAs quantum dots site-selectively grown on pre-structured GaAs substrates. A morphological transition is observed with original double dots merging into one single dot during annealing. This is accompanied by a reduction of quantum dots originally nucleating between defined sites. The photoluminescence intensity of annealed site-selective quantum dots is compared to annealed self-assembled dots with linewidths of single dot emission of about 170 and 81μeV, respectively. UV-ozone cleaning is used to optimize the sample cleaning prior to quantum dot growth.
KW - In situ annealing
KW - Molecular beam epitaxy
KW - Patterning
KW - Quantum dots
KW - Site-selective growth
UR - http://www.scopus.com/inward/record.url?scp=79958011899&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79958011899&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2010.11.162
DO - 10.1016/j.jcrysgro.2010.11.162
M3 - Article
VL - 323
SP - 187
EP - 190
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 1
ER -