@article{2e5b455575214cef9c351337bff36218,
title = "Growth and annealing of InAs quantum dots on pre-structured GaAs substrates",
abstract = "In this study, we investigated the effect of in situ annealing on InAs quantum dots site-selectively grown on pre-structured GaAs substrates. A morphological transition is observed with original double dots merging into one single dot during annealing. This is accompanied by a reduction of quantum dots originally nucleating between defined sites. The photoluminescence intensity of annealed site-selective quantum dots is compared to annealed self-assembled dots with linewidths of single dot emission of about 170 and 81μeV, respectively. UV-ozone cleaning is used to optimize the sample cleaning prior to quantum dot growth.",
keywords = "In situ annealing, Molecular beam epitaxy, Patterning, Quantum dots, Site-selective growth",
author = "M. Helfrich and Hu, {D. Z.} and J. Hendrickson and M. Gehl and D. R{\"u}lke and R. Gr{\"o}ger and D. Litvinov and S. Linden and M. Wegener and D. Gerthsen and T. Schimmel and M. Hetterich and H. Kalt and G. Khitrova and Gibbs, {H. M.} and Schaadt, {D. M.}",
note = "Funding Information: The Karlsruhe researchers acknowledge financial support from the Deutsche Forschungsgemeinschaft (DFG) and the State of Baden-W{\"u}rttemberg through the DFG-Center for Functional Nanostructures (CFN) within subproject A2.6. The Tucson group would like to acknowledge support (EEC-0812072) from the National Science Foundation (NSF) through the Engineering Research Center for Integrated Access Networks (CIAN) and Atomic Molecular and Optical Physics (AMOP) and Electronics, Photonics and Device Technologies (EPDT), as well as AFOSR, and Arizona Technology & Research Initiative Funding (TRIF). ",
year = "2011",
month = may,
day = "15",
doi = "10.1016/j.jcrysgro.2010.11.162",
language = "English (US)",
volume = "323",
pages = "187--190",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "1",
}