Growth and annealing of InAs quantum dots on pre-structured GaAs substrates

M. Helfrich; D. Z. Hu; J. Hendrickson; M. Gehl; D. Rülke; R. Gröger; D. Litvinov; S. Linden; M. Wegener; D. Gerthsen; T. Schimmel; M. Hetterich; H. Kalt; G. Khitrova; H. M. Gibbs; D. M. Schaadt

doi:10.1016/j.jcrysgro.2010.11.162

Growth and annealing of InAs quantum dots on pre-structured GaAs substrates

M. Helfrich, D. Z. Hu, J. Hendrickson, M. Gehl, D. Rülke, R. Gröger, D. Litvinov, S. Linden, M. Wegener, D. Gerthsen, T. Schimmel, M. Hetterich, H. Kalt, G. Khitrova, H. M. Gibbs, D. M. Schaadt

Optical Sciences, College of

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

In this study, we investigated the effect of in situ annealing on InAs quantum dots site-selectively grown on pre-structured GaAs substrates. A morphological transition is observed with original double dots merging into one single dot during annealing. This is accompanied by a reduction of quantum dots originally nucleating between defined sites. The photoluminescence intensity of annealed site-selective quantum dots is compared to annealed self-assembled dots with linewidths of single dot emission of about 170 and 81μeV, respectively. UV-ozone cleaning is used to optimize the sample cleaning prior to quantum dot growth.

Original language	English (US)
Pages (from-to)	187-190
Number of pages	4
Journal	Journal of Crystal Growth
Volume	323
Issue number	1
DOIs	https://doi.org/10.1016/j.jcrysgro.2010.11.162
State	Published - May 15 2011

Keywords

In situ annealing
Molecular beam epitaxy
Patterning
Quantum dots
Site-selective growth

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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Helfrich, M., Hu, D. Z., Hendrickson, J., Gehl, M., Rülke, D., Gröger, R., Litvinov, D., Linden, S., Wegener, M., Gerthsen, D., Schimmel, T., Hetterich, M., Kalt, H., Khitrova, G., Gibbs, H. M., & Schaadt, D. M. (2011). Growth and annealing of InAs quantum dots on pre-structured GaAs substrates. Journal of Crystal Growth, 323(1), 187-190. https://doi.org/10.1016/j.jcrysgro.2010.11.162

Growth and annealing of InAs quantum dots on pre-structured GaAs substrates. / Helfrich, M.; Hu, D. Z.; Hendrickson, J.; Gehl, M.; Rülke, D.; Gröger, R.; Litvinov, D.; Linden, S.; Wegener, M.; Gerthsen, D.; Schimmel, T.; Hetterich, M.; Kalt, H.; Khitrova, G.; Gibbs, H. M.; Schaadt, D. M.

In: Journal of Crystal Growth, Vol. 323, No. 1, 15.05.2011, p. 187-190.

Research output: Contribution to journal › Article › peer-review

Helfrich, M, Hu, DZ, Hendrickson, J, Gehl, M, Rülke, D, Gröger, R, Litvinov, D, Linden, S, Wegener, M, Gerthsen, D, Schimmel, T, Hetterich, M, Kalt, H, Khitrova, G, Gibbs, HM & Schaadt, DM 2011, 'Growth and annealing of InAs quantum dots on pre-structured GaAs substrates', Journal of Crystal Growth, vol. 323, no. 1, pp. 187-190. https://doi.org/10.1016/j.jcrysgro.2010.11.162

Helfrich, M. ; Hu, D. Z. ; Hendrickson, J. ; Gehl, M. ; Rülke, D. ; Gröger, R. ; Litvinov, D. ; Linden, S. ; Wegener, M. ; Gerthsen, D. ; Schimmel, T. ; Hetterich, M. ; Kalt, H. ; Khitrova, G. ; Gibbs, H. M. ; Schaadt, D. M. / Growth and annealing of InAs quantum dots on pre-structured GaAs substrates. In: Journal of Crystal Growth. 2011 ; Vol. 323, No. 1. pp. 187-190.

@article{2e5b455575214cef9c351337bff36218,

title = "Growth and annealing of InAs quantum dots on pre-structured GaAs substrates",

abstract = "In this study, we investigated the effect of in situ annealing on InAs quantum dots site-selectively grown on pre-structured GaAs substrates. A morphological transition is observed with original double dots merging into one single dot during annealing. This is accompanied by a reduction of quantum dots originally nucleating between defined sites. The photoluminescence intensity of annealed site-selective quantum dots is compared to annealed self-assembled dots with linewidths of single dot emission of about 170 and 81μeV, respectively. UV-ozone cleaning is used to optimize the sample cleaning prior to quantum dot growth.",

keywords = "In situ annealing, Molecular beam epitaxy, Patterning, Quantum dots, Site-selective growth",

author = "M. Helfrich and Hu, {D. Z.} and J. Hendrickson and M. Gehl and D. R{\"u}lke and R. Gr{\"o}ger and D. Litvinov and S. Linden and M. Wegener and D. Gerthsen and T. Schimmel and M. Hetterich and H. Kalt and G. Khitrova and Gibbs, {H. M.} and Schaadt, {D. M.}",

year = "2011",

month = may,

day = "15",

doi = "10.1016/j.jcrysgro.2010.11.162",

language = "English (US)",

volume = "323",

pages = "187--190",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "1",

}

TY - JOUR

T1 - Growth and annealing of InAs quantum dots on pre-structured GaAs substrates

AU - Helfrich, M.

AU - Hu, D. Z.

AU - Hendrickson, J.

AU - Gehl, M.

AU - Rülke, D.

AU - Gröger, R.

AU - Litvinov, D.

AU - Linden, S.

AU - Wegener, M.

AU - Gerthsen, D.

AU - Schimmel, T.

AU - Hetterich, M.

AU - Kalt, H.

AU - Khitrova, G.

AU - Gibbs, H. M.

AU - Schaadt, D. M.

PY - 2011/5/15

Y1 - 2011/5/15

N2 - In this study, we investigated the effect of in situ annealing on InAs quantum dots site-selectively grown on pre-structured GaAs substrates. A morphological transition is observed with original double dots merging into one single dot during annealing. This is accompanied by a reduction of quantum dots originally nucleating between defined sites. The photoluminescence intensity of annealed site-selective quantum dots is compared to annealed self-assembled dots with linewidths of single dot emission of about 170 and 81μeV, respectively. UV-ozone cleaning is used to optimize the sample cleaning prior to quantum dot growth.

AB - In this study, we investigated the effect of in situ annealing on InAs quantum dots site-selectively grown on pre-structured GaAs substrates. A morphological transition is observed with original double dots merging into one single dot during annealing. This is accompanied by a reduction of quantum dots originally nucleating between defined sites. The photoluminescence intensity of annealed site-selective quantum dots is compared to annealed self-assembled dots with linewidths of single dot emission of about 170 and 81μeV, respectively. UV-ozone cleaning is used to optimize the sample cleaning prior to quantum dot growth.

KW - In situ annealing

KW - Molecular beam epitaxy

KW - Patterning

KW - Quantum dots

KW - Site-selective growth

UR - http://www.scopus.com/inward/record.url?scp=79958011899&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79958011899&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2010.11.162

DO - 10.1016/j.jcrysgro.2010.11.162

M3 - Article

AN - SCOPUS:79958011899

VL - 323

SP - 187

EP - 190

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1

ER -