Abstract
In this study, we investigated the effect of in situ annealing on InAs quantum dots site-selectively grown on pre-structured GaAs substrates. A morphological transition is observed with original double dots merging into one single dot during annealing. This is accompanied by a reduction of quantum dots originally nucleating between defined sites. The photoluminescence intensity of annealed site-selective quantum dots is compared to annealed self-assembled dots with linewidths of single dot emission of about 170 and 81μeV, respectively. UV-ozone cleaning is used to optimize the sample cleaning prior to quantum dot growth.
Original language | English (US) |
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Pages (from-to) | 187-190 |
Number of pages | 4 |
Journal | Journal of Crystal Growth |
Volume | 323 |
Issue number | 1 |
DOIs | |
State | Published - May 15 2011 |
Keywords
- In situ annealing
- Molecular beam epitaxy
- Patterning
- Quantum dots
- Site-selective growth
ASJC Scopus subject areas
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry