Growth and optimization of 2-μm InGaSb/AlGaSb quantum-well-based VECSELs on GaAs/AlGaAs DBRs

Pankaj Ahirwar, Thomas J. Rotter, Darryl Shima, Nahid A. Jahan, Stephen P R Clark, Sadhvikas J. Addamane, Ganesh Balakrishnan, Alexandre Laurain, Jorg Hader, Yi Ying Lai, Jerome V Moloney, Ikuo Suemune, Robert G. Bedford

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We report the growth of optically pumped vertical-external-cavity surface-emitting lasers (VECSELs) based on InGaSb/AlGaSb quantum wells grown on GaAs/AlGaAs distri-buted Bragg reflectors (DBRs). The 7.78% lattice mismatch between GaSb and GaAs is accommodated by an array of 90° misfit dislocations at the interface. This results in spontaneous relaxation of the GaSb epilayer and also significantly reduces the threading dislocation density. The VECSELs are operated in both pulsed (with 340-W peak output power) and continuous wave mode (with 0.12-W peak output power). We investigate the effects of the GaSb/GaAs interface by comparing the lattice mismatched III-Sb VECSEL grown on GaAs/AlGaAs DBRs to a lattice matched III-Sb VECSEL grown on GaSb/AlAsSb DBRs. The lattice matched VECSEL outperforms the lattice mismatched VECSEL in terms of threshold pump density, efficiency, and maximum continuous-wave output power. This can be attributed to the presence of threading dislocations throughout the active region of the mismatched VECSEL, which is confirmed by cross-sectional transmission electron microscopy. The optical properties of the III-Sb active regions are characterized by time-resolved photoluminescence, which can be used to optimize the IMF interface.

Original languageEnglish (US)
Article number6410324
JournalIEEE Journal on Selected Topics in Quantum Electronics
Volume19
Issue number4
DOIs
StatePublished - 2013

Fingerprint

Bragg reflectors
Surface emitting lasers
surface emitting lasers
Semiconductor quantum wells
aluminum gallium arsenides
quantum wells
cavities
optimization
continuous radiation
output
Lattice mismatch
Epilayers
Dislocations (crystals)
Photoluminescence
Optical properties
Pumps
pumps
Transmission electron microscopy
photoluminescence
optical properties

Keywords

  • quantum-well lasers
  • Semiconductor lasers
  • surface-emitting lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics

Cite this

Ahirwar, P., Rotter, T. J., Shima, D., Jahan, N. A., Clark, S. P. R., Addamane, S. J., ... Bedford, R. G. (2013). Growth and optimization of 2-μm InGaSb/AlGaSb quantum-well-based VECSELs on GaAs/AlGaAs DBRs. IEEE Journal on Selected Topics in Quantum Electronics, 19(4), [6410324]. https://doi.org/10.1109/JSTQE.2013.2239615

Growth and optimization of 2-μm InGaSb/AlGaSb quantum-well-based VECSELs on GaAs/AlGaAs DBRs. / Ahirwar, Pankaj; Rotter, Thomas J.; Shima, Darryl; Jahan, Nahid A.; Clark, Stephen P R; Addamane, Sadhvikas J.; Balakrishnan, Ganesh; Laurain, Alexandre; Hader, Jorg; Lai, Yi Ying; Moloney, Jerome V; Suemune, Ikuo; Bedford, Robert G.

In: IEEE Journal on Selected Topics in Quantum Electronics, Vol. 19, No. 4, 6410324, 2013.

Research output: Contribution to journalArticle

Ahirwar, P, Rotter, TJ, Shima, D, Jahan, NA, Clark, SPR, Addamane, SJ, Balakrishnan, G, Laurain, A, Hader, J, Lai, YY, Moloney, JV, Suemune, I & Bedford, RG 2013, 'Growth and optimization of 2-μm InGaSb/AlGaSb quantum-well-based VECSELs on GaAs/AlGaAs DBRs', IEEE Journal on Selected Topics in Quantum Electronics, vol. 19, no. 4, 6410324. https://doi.org/10.1109/JSTQE.2013.2239615
Ahirwar, Pankaj ; Rotter, Thomas J. ; Shima, Darryl ; Jahan, Nahid A. ; Clark, Stephen P R ; Addamane, Sadhvikas J. ; Balakrishnan, Ganesh ; Laurain, Alexandre ; Hader, Jorg ; Lai, Yi Ying ; Moloney, Jerome V ; Suemune, Ikuo ; Bedford, Robert G. / Growth and optimization of 2-μm InGaSb/AlGaSb quantum-well-based VECSELs on GaAs/AlGaAs DBRs. In: IEEE Journal on Selected Topics in Quantum Electronics. 2013 ; Vol. 19, No. 4.
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AU - Shima, Darryl

AU - Jahan, Nahid A.

AU - Clark, Stephen P R

AU - Addamane, Sadhvikas J.

AU - Balakrishnan, Ganesh

AU - Laurain, Alexandre

AU - Hader, Jorg

AU - Lai, Yi Ying

AU - Moloney, Jerome V

AU - Suemune, Ikuo

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AB - We report the growth of optically pumped vertical-external-cavity surface-emitting lasers (VECSELs) based on InGaSb/AlGaSb quantum wells grown on GaAs/AlGaAs distri-buted Bragg reflectors (DBRs). The 7.78% lattice mismatch between GaSb and GaAs is accommodated by an array of 90° misfit dislocations at the interface. This results in spontaneous relaxation of the GaSb epilayer and also significantly reduces the threading dislocation density. The VECSELs are operated in both pulsed (with 340-W peak output power) and continuous wave mode (with 0.12-W peak output power). We investigate the effects of the GaSb/GaAs interface by comparing the lattice mismatched III-Sb VECSEL grown on GaAs/AlGaAs DBRs to a lattice matched III-Sb VECSEL grown on GaSb/AlAsSb DBRs. The lattice matched VECSEL outperforms the lattice mismatched VECSEL in terms of threshold pump density, efficiency, and maximum continuous-wave output power. This can be attributed to the presence of threading dislocations throughout the active region of the mismatched VECSEL, which is confirmed by cross-sectional transmission electron microscopy. The optical properties of the III-Sb active regions are characterized by time-resolved photoluminescence, which can be used to optimize the IMF interface.

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