Growth and structure of IrSi3 on Si(111)

Davis A. Lange, Gary A. Gibson, Charles M Falco

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Molecular-beam epitaxy has been used to grow films that are almost entirely IrSi3 by codeposition of Si and Ir in a 3:1 ratio on Si(111) substrates. Bragg-Brentano and Seemann-Bohlin x-ray diffraction reveal that polycrystalline IrSi3 films form as low as 490°C, the lowest temperature yet reported for growth of this iridium silicide phase. Above 580°C this hexagonal phase becomes textured, with as many as seven preferred growth orientations on Si(111). Samples codeposited on Si(111) between 680 and 780°C consist almost entirely of IrSi3 with its c axis perpendicular to the substrate's surface. At higher substrate temperatures, near 830°C growth of IrSi3 with its c axis in the plane of the substrate dominates. Atomic force microscopy shows that there is a difference in the surface morphology of the c-axis in-plane and perpendicular growth modes. Transmission electron microscope diffraction and in situ low-energy electron diffraction verify that both of these IrSi3 growth modes are epitaxially registered with their substrates. To check the quality of this epitaxy ion-beam channeling and x-ray rocking curves were used. The data from the epitaxial samples have channeling χmin ratios as low as 0.64. The x-ray rocking curves for these IrSi3 films are narrow, with full-width-at- half-maxima of as little as 0.07°.

Original languageEnglish (US)
Pages (from-to)2917-2923
Number of pages7
JournalJournal of Applied Physics
Volume75
Issue number6
DOIs
StatePublished - 1994

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curves
iridium
epitaxy
x ray diffraction
x rays
molecular beam epitaxy
electron diffraction
electron microscopes
ion beams
atomic force microscopy
diffraction
temperature
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Growth and structure of IrSi3 on Si(111). / Lange, Davis A.; Gibson, Gary A.; Falco, Charles M.

In: Journal of Applied Physics, Vol. 75, No. 6, 1994, p. 2917-2923.

Research output: Contribution to journalArticle

Lange, Davis A. ; Gibson, Gary A. ; Falco, Charles M. / Growth and structure of IrSi3 on Si(111). In: Journal of Applied Physics. 1994 ; Vol. 75, No. 6. pp. 2917-2923.
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