Growth and surface structure of epitaxial be thin films

Charles M. Falco, James Eickmann, Judith A. Ruffner, J. M. Slaughter

Research output: Contribution to journalConference articlepeer-review

Abstract

We have investigated the growth of beryllium thin films on α-Al2O3, Si(111), and Ge(111). In all cases, epitaxial Be films were obtained under the proper conditions. The effects of substrate temperature T on crystalline quality and surface structure were also studied. Samples were analyzed in situ using reflection high energy electron diffraction and ex situ with ion beam analysis, scanning electron microscopy, atomic force microscopy, and a variety of x-ray diffraction techniques. Studies showed an increase in crystalline quality with increased T, as well as the presence of a surface superstructure, probably √3×√3, R30°, for films deposited on Si at T≥ 300 °C and films on Ge at T ≥ 200 °C. To date, the highest quality Be films are those grown on Ge(111) at T = 300 °C.

Original languageEnglish (US)
Pages (from-to)338-344
Number of pages7
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume2364
DOIs
StatePublished - Oct 26 1994
Event2nd International Conference on Thin Film Physics and Applications 1994 - Shanghai, China
Duration: Apr 15 1994Apr 17 1994

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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