Growth and thermal conductivity analysis of polycrystalline GaAs on chemical vapor deposition diamond for use in thermal management of high-power semiconductor lasers

S. P.R. Clark, P. Ahirwar, F. T. Jaeckel, C. P. Hains, A. R. Albrecht, T. J. Rotter, L. R. Dawson, G. Balakrishnan, P. E. Hopkins, L. M. Phinney, J. Hader, J. V. Moloney

Research output: Contribution to journalArticle

6 Scopus citations

Abstract

The authors demonstrate the growth of polycrystalline GaAs thin films on polycrystalline chemical vapor deposition (CVD) diamond by low-temperature molecular beam epitaxy. The low-temperature GaAs (LT-GaAs) layer is easily polished compared to the CVD diamond, and this process results in a reduction of rms surface roughness from 50 to <5 nm. This makes the LT-GaAs on diamond layer an ideal wafer-bonding interface for high-power semiconductor devices. The samples were grown at 0.2 μm/h with a substrate temperature of 250°C and a 1:8 III/V beam equivalent pressure ratio. The samples were analyzed by x-ray powder diffraction, atomic force microscopy for surface roughness, and in situ reflective high-energy electron diffraction during molecular beam epitaxy growth. The authors also measure the thermal conductivity of the GaAs layer on CVD diamond using pump-probe time domain thermoreflectance.

Original languageEnglish (US)
Article number03C130
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume29
Issue number3
DOIs
StatePublished - May 2011

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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