Growth mechanism of polycrystalline CsI(Tl) films on glass and single crystal Si substrates

Lina Guo, Shuang Liu, Tianyu Wang, Xiaochuan Tan, Rongguo Lu, Shangjian Zhang, Yong Liu, Zhiyong Zhong, Charles M Falco

Research output: Contribution to journalArticle

Abstract

The microstructure morphology and crystal quality of CsI(Tl) films are influenced by the crystal properties of substrates. In this work, CsI(Tl) films on the glass and single crystal silicon substrates are fabricated by vacuum thermal evaporation at a low deposition rate. The microstructure morphology, crystalline quality and scintillation properties of the films were examined by using scanning electron microscopy, X-ray diffraction, photoluminescence and radioluminescent spectrum. To study the growth mechanism of CsI(Tl) films on amorphous and monocrystalline substrates, a growth model based on the classical Volmer-Weber (VW) growth mode are proposed. During the film growing, the wetting and not-wetting phenomena of the clusters appear on the glass and Si(1 1 1) substrates respectively. In addition, the microcrystalline columns with different orientations are modeled to explain the surface morphology deteriorate of the CsI(Tl) film with 3 μm thickness on Si(1 1 1) substrate.

LanguageEnglish (US)
Pages19-23
Number of pages5
JournalJournal of Crystal Growth
Volume506
DOIs
StatePublished - Jan 15 2019

Fingerprint

Single crystals
Glass
glass
single crystals
Substrates
crystals
Wetting
wetting
Vacuum evaporation
Crystals
Microstructure
Thermal evaporation
Scintillation
Silicon
Film growth
microstructure
Deposition rates
Surface morphology
Photoluminescence
scintillation

Keywords

  • A1. Growth model
  • A1. Microstructure morphology
  • A1. Scintillation properties
  • A3. Thermal evaporation deposition
  • B1. CsI(Tl) film

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Growth mechanism of polycrystalline CsI(Tl) films on glass and single crystal Si substrates. / Guo, Lina; Liu, Shuang; Wang, Tianyu; Tan, Xiaochuan; Lu, Rongguo; Zhang, Shangjian; Liu, Yong; Zhong, Zhiyong; Falco, Charles M.

In: Journal of Crystal Growth, Vol. 506, 15.01.2019, p. 19-23.

Research output: Contribution to journalArticle

Guo, Lina ; Liu, Shuang ; Wang, Tianyu ; Tan, Xiaochuan ; Lu, Rongguo ; Zhang, Shangjian ; Liu, Yong ; Zhong, Zhiyong ; Falco, Charles M. / Growth mechanism of polycrystalline CsI(Tl) films on glass and single crystal Si substrates. In: Journal of Crystal Growth. 2019 ; Vol. 506. pp. 19-23.
@article{7c708f4a5dff426ca0f24770142501d1,
title = "Growth mechanism of polycrystalline CsI(Tl) films on glass and single crystal Si substrates",
abstract = "The microstructure morphology and crystal quality of CsI(Tl) films are influenced by the crystal properties of substrates. In this work, CsI(Tl) films on the glass and single crystal silicon substrates are fabricated by vacuum thermal evaporation at a low deposition rate. The microstructure morphology, crystalline quality and scintillation properties of the films were examined by using scanning electron microscopy, X-ray diffraction, photoluminescence and radioluminescent spectrum. To study the growth mechanism of CsI(Tl) films on amorphous and monocrystalline substrates, a growth model based on the classical Volmer-Weber (VW) growth mode are proposed. During the film growing, the wetting and not-wetting phenomena of the clusters appear on the glass and Si(1 1 1) substrates respectively. In addition, the microcrystalline columns with different orientations are modeled to explain the surface morphology deteriorate of the CsI(Tl) film with 3 μm thickness on Si(1 1 1) substrate.",
keywords = "A1. Growth model, A1. Microstructure morphology, A1. Scintillation properties, A3. Thermal evaporation deposition, B1. CsI(Tl) film",
author = "Lina Guo and Shuang Liu and Tianyu Wang and Xiaochuan Tan and Rongguo Lu and Shangjian Zhang and Yong Liu and Zhiyong Zhong and Falco, {Charles M}",
year = "2019",
month = "1",
day = "15",
doi = "10.1016/j.jcrysgro.2018.06.022",
language = "English (US)",
volume = "506",
pages = "19--23",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",

}

TY - JOUR

T1 - Growth mechanism of polycrystalline CsI(Tl) films on glass and single crystal Si substrates

AU - Guo, Lina

AU - Liu, Shuang

AU - Wang, Tianyu

AU - Tan, Xiaochuan

AU - Lu, Rongguo

AU - Zhang, Shangjian

AU - Liu, Yong

AU - Zhong, Zhiyong

AU - Falco, Charles M

PY - 2019/1/15

Y1 - 2019/1/15

N2 - The microstructure morphology and crystal quality of CsI(Tl) films are influenced by the crystal properties of substrates. In this work, CsI(Tl) films on the glass and single crystal silicon substrates are fabricated by vacuum thermal evaporation at a low deposition rate. The microstructure morphology, crystalline quality and scintillation properties of the films were examined by using scanning electron microscopy, X-ray diffraction, photoluminescence and radioluminescent spectrum. To study the growth mechanism of CsI(Tl) films on amorphous and monocrystalline substrates, a growth model based on the classical Volmer-Weber (VW) growth mode are proposed. During the film growing, the wetting and not-wetting phenomena of the clusters appear on the glass and Si(1 1 1) substrates respectively. In addition, the microcrystalline columns with different orientations are modeled to explain the surface morphology deteriorate of the CsI(Tl) film with 3 μm thickness on Si(1 1 1) substrate.

AB - The microstructure morphology and crystal quality of CsI(Tl) films are influenced by the crystal properties of substrates. In this work, CsI(Tl) films on the glass and single crystal silicon substrates are fabricated by vacuum thermal evaporation at a low deposition rate. The microstructure morphology, crystalline quality and scintillation properties of the films were examined by using scanning electron microscopy, X-ray diffraction, photoluminescence and radioluminescent spectrum. To study the growth mechanism of CsI(Tl) films on amorphous and monocrystalline substrates, a growth model based on the classical Volmer-Weber (VW) growth mode are proposed. During the film growing, the wetting and not-wetting phenomena of the clusters appear on the glass and Si(1 1 1) substrates respectively. In addition, the microcrystalline columns with different orientations are modeled to explain the surface morphology deteriorate of the CsI(Tl) film with 3 μm thickness on Si(1 1 1) substrate.

KW - A1. Growth model

KW - A1. Microstructure morphology

KW - A1. Scintillation properties

KW - A3. Thermal evaporation deposition

KW - B1. CsI(Tl) film

UR - http://www.scopus.com/inward/record.url?scp=85054742689&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85054742689&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2018.06.022

DO - 10.1016/j.jcrysgro.2018.06.022

M3 - Article

VL - 506

SP - 19

EP - 23

JO - Journal of Crystal Growth

T2 - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

ER -