Growth mechanism of polycrystalline CsI(Tl) films on glass and single crystal Si substrates

Lina Guo, Shuang Liu, Tianyu Wang, Xiaochuan Tan, Rongguo Lu, Shangjian Zhang, Yong Liu, Zhiyong Zhong, Charles M. Falco

Research output: Contribution to journalArticlepeer-review


The microstructure morphology and crystal quality of CsI(Tl) films are influenced by the crystal properties of substrates. In this work, CsI(Tl) films on the glass and single crystal silicon substrates are fabricated by vacuum thermal evaporation at a low deposition rate. The microstructure morphology, crystalline quality and scintillation properties of the films were examined by using scanning electron microscopy, X-ray diffraction, photoluminescence and radioluminescent spectrum. To study the growth mechanism of CsI(Tl) films on amorphous and monocrystalline substrates, a growth model based on the classical Volmer-Weber (VW) growth mode are proposed. During the film growing, the wetting and not-wetting phenomena of the clusters appear on the glass and Si(1 1 1) substrates respectively. In addition, the microcrystalline columns with different orientations are modeled to explain the surface morphology deteriorate of the CsI(Tl) film with 3 μm thickness on Si(1 1 1) substrate.

Original languageEnglish (US)
Pages (from-to)19-23
Number of pages5
JournalJournal of Crystal Growth
StatePublished - Jan 15 2019


  • A1. Growth model
  • A1. Microstructure morphology
  • A1. Scintillation properties
  • A3. Thermal evaporation deposition
  • B1. CsI(Tl) film

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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