Growth modes of Pd, Ag, and Si thin films on B

Patrick A. Kearney, J. M. Slaughter, Dian Hong Shen, Charles M Falco

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Abstract

We have studied the growth of Pd, Ag, and Si on amorphous B films at room temperature to determine the growth modes, the chemical sharpness of the interfaces, and the structure of the layers formed. All films were deposited in ultrahigh vacuum and studied in situ with Auger electron spectroscopy, x-ray photoelectron spectroscopy, and reflection high-energy electron diffraction. Scanning tunneling microscopy characterization and Rutherford backscattering calibrations were done ex situ. In the Pd case, we find that it reacts with the B to form a smooth, amorphous PdxB1-x layer, with x≈0.85. This reaction occurred for all Pd coverages studied, from 2.3 to 130 angstrom, with only small variations in x. Depositing Ag on B results in a polycrystalline layer composed of large Ag islands. We find that Si-on-B forms a sharp interface and an amorphous overlayer of pure Si. The applicability of these materials to multilayer extreme ultraviolet optics is discussed.

Original languageEnglish (US)
Pages (from-to)78-82
Number of pages5
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume13
Issue number1
DOIs
Publication statusPublished - Jan 1995

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ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Physics and Astronomy (miscellaneous)
  • Surfaces and Interfaces

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