Growth modes of Pd, Ag, and Si thin films on B

Patrick A. Kearney, J. M. Slaughter, Dian Hong Shen, Charles M. Falco

Research output: Contribution to journalArticle

3 Scopus citations

Abstract

We have studied the growth of Pd, Ag, and Si on amorphous B films at room temperature to determine the growth modes, the chemical sharpness of the interfaces, and the structure of the layers formed. All films were deposited in ultrahigh vacuum and studied in situ with Auger electron spectroscopy, x-ray photoelectron spectroscopy, and reflection high-energy electron diffraction. Scanning tunneling microscopy characterization and Rutherford backscattering calibrations were done ex situ. In the Pd case, we find that it reacts with the B to form a smooth, amorphous PdxB1-xlayer, with x0.85. This reaction occurred for all Pd coverages studied, from 2.3 to 130 A, with only small variations in x. Depositing Ag on B results in a polycrystalline layer composed of large Ag islands. We find that Si-on-B forms a sharp interface and an amorphous overlayer of pure Si. The applicability of these materials to multilayer extreme ultraviolet optics is discussed.

Original languageEnglish (US)
Pages (from-to)78-82
Number of pages5
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume13
Issue number1
DOIs
StatePublished - Jan 1995

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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