Growth of layered semiconductors by molecular-beam epitaxy: Formation and characterization of GaSe, MoSe 2, and phthalocyanine ultrathin films on sulfur-passivated GaP(111)

C. Hammond, A. Back, M. Lawrence, K. Nebesny, Neal R Armstrong, R. Schlaf, N. R. Armstrong

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Studies of the sulfur passivation of GaP(111) surfaces with solution treatments, and the subsequent molecular-beam epitaxy growth and characterization of ultrathin films of layered semiconductors on those surfaces are presented in this article. Simple solution passivation procedures allow formation of a S-GaP(111) semiconductor surface which will support the growth of highly ordered layers of GaSe (E band gap=2.05 eV). These thin GaSe layers then permit the further growth of ordered layers of a semiconductor like MoSe 2 (E band gap=1.0 eV) or an organic dye such as a phthalocyanine. Reflection high energy electron diffraction and angle-resolved x-ray photoelectron spectroscopy have been used to determine the structure and composition of the surface layers formed at each stage of the deposition process. Absorption spectra are used to characterize the band edge and A 1,2 exciton energies of the MoSe 2/GaSe S-GaP(111) thin films, and the position and shape of the phthalocyanine Q band.

Original languageEnglish (US)
Pages (from-to)1768-1775
Number of pages8
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume13
Issue number3
DOIs
StatePublished - 1995

Fingerprint

Ultrathin films
Sulfur
Molecular beam epitaxy
sulfur
molecular beam epitaxy
Passivation
passivity
Energy gap
Semiconductor materials
Reflection high energy electron diffraction
Photoelectron spectroscopy
Excitons
high energy electrons
x ray spectroscopy
Absorption spectra
surface layers
Coloring Agents
Dyes
electron diffraction
dyes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

@article{7d90d93809a44a868ee11825dae2579f,
title = "Growth of layered semiconductors by molecular-beam epitaxy: Formation and characterization of GaSe, MoSe 2, and phthalocyanine ultrathin films on sulfur-passivated GaP(111)",
abstract = "Studies of the sulfur passivation of GaP(111) surfaces with solution treatments, and the subsequent molecular-beam epitaxy growth and characterization of ultrathin films of layered semiconductors on those surfaces are presented in this article. Simple solution passivation procedures allow formation of a S-GaP(111) semiconductor surface which will support the growth of highly ordered layers of GaSe (E band gap=2.05 eV). These thin GaSe layers then permit the further growth of ordered layers of a semiconductor like MoSe 2 (E band gap=1.0 eV) or an organic dye such as a phthalocyanine. Reflection high energy electron diffraction and angle-resolved x-ray photoelectron spectroscopy have been used to determine the structure and composition of the surface layers formed at each stage of the deposition process. Absorption spectra are used to characterize the band edge and A 1,2 exciton energies of the MoSe 2/GaSe S-GaP(111) thin films, and the position and shape of the phthalocyanine Q band.",
author = "C. Hammond and A. Back and M. Lawrence and K. Nebesny and Armstrong, {Neal R} and R. Schlaf and Armstrong, {N. R.}",
year = "1995",
doi = "10.1116/1.579767",
language = "English (US)",
volume = "13",
pages = "1768--1775",
journal = "Journal of Vacuum Science and Technology A",
issn = "0734-2101",
publisher = "AVS Science and Technology Society",
number = "3",

}

TY - JOUR

T1 - Growth of layered semiconductors by molecular-beam epitaxy

T2 - Formation and characterization of GaSe, MoSe 2, and phthalocyanine ultrathin films on sulfur-passivated GaP(111)

AU - Hammond, C.

AU - Back, A.

AU - Lawrence, M.

AU - Nebesny, K.

AU - Armstrong, Neal R

AU - Schlaf, R.

AU - Armstrong, N. R.

PY - 1995

Y1 - 1995

N2 - Studies of the sulfur passivation of GaP(111) surfaces with solution treatments, and the subsequent molecular-beam epitaxy growth and characterization of ultrathin films of layered semiconductors on those surfaces are presented in this article. Simple solution passivation procedures allow formation of a S-GaP(111) semiconductor surface which will support the growth of highly ordered layers of GaSe (E band gap=2.05 eV). These thin GaSe layers then permit the further growth of ordered layers of a semiconductor like MoSe 2 (E band gap=1.0 eV) or an organic dye such as a phthalocyanine. Reflection high energy electron diffraction and angle-resolved x-ray photoelectron spectroscopy have been used to determine the structure and composition of the surface layers formed at each stage of the deposition process. Absorption spectra are used to characterize the band edge and A 1,2 exciton energies of the MoSe 2/GaSe S-GaP(111) thin films, and the position and shape of the phthalocyanine Q band.

AB - Studies of the sulfur passivation of GaP(111) surfaces with solution treatments, and the subsequent molecular-beam epitaxy growth and characterization of ultrathin films of layered semiconductors on those surfaces are presented in this article. Simple solution passivation procedures allow formation of a S-GaP(111) semiconductor surface which will support the growth of highly ordered layers of GaSe (E band gap=2.05 eV). These thin GaSe layers then permit the further growth of ordered layers of a semiconductor like MoSe 2 (E band gap=1.0 eV) or an organic dye such as a phthalocyanine. Reflection high energy electron diffraction and angle-resolved x-ray photoelectron spectroscopy have been used to determine the structure and composition of the surface layers formed at each stage of the deposition process. Absorption spectra are used to characterize the band edge and A 1,2 exciton energies of the MoSe 2/GaSe S-GaP(111) thin films, and the position and shape of the phthalocyanine Q band.

UR - http://www.scopus.com/inward/record.url?scp=21844486932&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=21844486932&partnerID=8YFLogxK

U2 - 10.1116/1.579767

DO - 10.1116/1.579767

M3 - Article

AN - SCOPUS:21844486932

VL - 13

SP - 1768

EP - 1775

JO - Journal of Vacuum Science and Technology A

JF - Journal of Vacuum Science and Technology A

SN - 0734-2101

IS - 3

ER -