Growth of layered semiconductors by molecular-beam epitaxy: Formation and characterization of GaSe, MoSe2, and phthalocyanine ultrathin films on sulfur-passivated GaP(111)

C. Hammond, A. Back, K. Nebesny, P. Lee, N. R. Armstrong

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Fingerprint Dive into the research topics of 'Growth of layered semiconductors by molecular-beam epitaxy: Formation and characterization of GaSe, MoSe<sub>2</sub>, and phthalocyanine ultrathin films on sulfur-passivated GaP(111)'. Together they form a unique fingerprint.

Chemical Compounds

Engineering & Materials Science

Physics & Astronomy