Growth of molybdenum on silicon: Structure and interface formation

J. M. Slaughter, Arye Shapiro, Patrick A. Kearney, Charles M Falco

Research output: Contribution to journalArticle

61 Citations (Scopus)

Abstract

Investigations of interface formation in the Mo-Si system were carried out by depositing Mo onto Si(100)-(2×1) and Si(111)-(7×7) surfaces in ultrahigh vacuum, followed by characterization with in situ reflection high-energy electron diffraction, low-energy electron diffraction, Auger-electron spectroscopy, and x-ray photoelectron spectroscopy (XPS). Continuous growth of multiple Mo coverages on a single Si wafer was accomplished with a technique involving a movable sample shutter. The formation of an amorphous interfacial silicide was observed at all substrate temperatures studied: 50°C, 100°C, and 200°C. However, the composition quickly becomes Mo rich as the deposition continues. The data are consistent with a composition profile that has an atomically abrupt transition between Si and amorphous MoSix, where x=2 for the first 4 and then decays with an error-function form with increasing overlayer thickness. The error-function interface-width parameter was found to be 10.0 at 50°C and 12.1 at 200°C. Significant differences were seen between Auger intensities calculated by two standard methods: the derivative-amplitude method and the linear-background integrated-intensity method. We attribute these differences to peak-shape changes (due to the varying chemical environment in the interfacial region) that invalidate the use of the derivative method. The XPS measurements revealed shifts in the energies of the Mo 3d3/2 and Mo 3d5/2 lines due to the reaction with the Si substrate. The maximum peak shift was -0.4 eV and originated from the Mo nearest the Si substrate.

Original languageEnglish (US)
Pages (from-to)3854-3863
Number of pages10
JournalPhysical Review B
Volume44
Issue number8
DOIs
StatePublished - 1991

Fingerprint

Molybdenum
Silicon
molybdenum
error functions
Photoelectron spectroscopy
x ray spectroscopy
silicon
Substrates
electron diffraction
photoelectron spectroscopy
Derivatives
X rays
Reflection high energy electron diffraction
Low energy electron diffraction
shift
shutters
Ultrahigh vacuum
Auger electron spectroscopy
Chemical analysis
high energy electrons

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Growth of molybdenum on silicon : Structure and interface formation. / Slaughter, J. M.; Shapiro, Arye; Kearney, Patrick A.; Falco, Charles M.

In: Physical Review B, Vol. 44, No. 8, 1991, p. 3854-3863.

Research output: Contribution to journalArticle

Slaughter, J. M. ; Shapiro, Arye ; Kearney, Patrick A. ; Falco, Charles M. / Growth of molybdenum on silicon : Structure and interface formation. In: Physical Review B. 1991 ; Vol. 44, No. 8. pp. 3854-3863.
@article{4b950b2c06b7440d9c9e74b34ff62ca8,
title = "Growth of molybdenum on silicon: Structure and interface formation",
abstract = "Investigations of interface formation in the Mo-Si system were carried out by depositing Mo onto Si(100)-(2×1) and Si(111)-(7×7) surfaces in ultrahigh vacuum, followed by characterization with in situ reflection high-energy electron diffraction, low-energy electron diffraction, Auger-electron spectroscopy, and x-ray photoelectron spectroscopy (XPS). Continuous growth of multiple Mo coverages on a single Si wafer was accomplished with a technique involving a movable sample shutter. The formation of an amorphous interfacial silicide was observed at all substrate temperatures studied: 50°C, 100°C, and 200°C. However, the composition quickly becomes Mo rich as the deposition continues. The data are consistent with a composition profile that has an atomically abrupt transition between Si and amorphous MoSix, where x=2 for the first 4 and then decays with an error-function form with increasing overlayer thickness. The error-function interface-width parameter was found to be 10.0 at 50°C and 12.1 at 200°C. Significant differences were seen between Auger intensities calculated by two standard methods: the derivative-amplitude method and the linear-background integrated-intensity method. We attribute these differences to peak-shape changes (due to the varying chemical environment in the interfacial region) that invalidate the use of the derivative method. The XPS measurements revealed shifts in the energies of the Mo 3d3/2 and Mo 3d5/2 lines due to the reaction with the Si substrate. The maximum peak shift was -0.4 eV and originated from the Mo nearest the Si substrate.",
author = "Slaughter, {J. M.} and Arye Shapiro and Kearney, {Patrick A.} and Falco, {Charles M}",
year = "1991",
doi = "10.1103/PhysRevB.44.3854",
language = "English (US)",
volume = "44",
pages = "3854--3863",
journal = "Physical Review B-Condensed Matter",
issn = "0163-1829",
publisher = "American Institute of Physics Publising LLC",
number = "8",

}

TY - JOUR

T1 - Growth of molybdenum on silicon

T2 - Structure and interface formation

AU - Slaughter, J. M.

AU - Shapiro, Arye

AU - Kearney, Patrick A.

AU - Falco, Charles M

PY - 1991

Y1 - 1991

N2 - Investigations of interface formation in the Mo-Si system were carried out by depositing Mo onto Si(100)-(2×1) and Si(111)-(7×7) surfaces in ultrahigh vacuum, followed by characterization with in situ reflection high-energy electron diffraction, low-energy electron diffraction, Auger-electron spectroscopy, and x-ray photoelectron spectroscopy (XPS). Continuous growth of multiple Mo coverages on a single Si wafer was accomplished with a technique involving a movable sample shutter. The formation of an amorphous interfacial silicide was observed at all substrate temperatures studied: 50°C, 100°C, and 200°C. However, the composition quickly becomes Mo rich as the deposition continues. The data are consistent with a composition profile that has an atomically abrupt transition between Si and amorphous MoSix, where x=2 for the first 4 and then decays with an error-function form with increasing overlayer thickness. The error-function interface-width parameter was found to be 10.0 at 50°C and 12.1 at 200°C. Significant differences were seen between Auger intensities calculated by two standard methods: the derivative-amplitude method and the linear-background integrated-intensity method. We attribute these differences to peak-shape changes (due to the varying chemical environment in the interfacial region) that invalidate the use of the derivative method. The XPS measurements revealed shifts in the energies of the Mo 3d3/2 and Mo 3d5/2 lines due to the reaction with the Si substrate. The maximum peak shift was -0.4 eV and originated from the Mo nearest the Si substrate.

AB - Investigations of interface formation in the Mo-Si system were carried out by depositing Mo onto Si(100)-(2×1) and Si(111)-(7×7) surfaces in ultrahigh vacuum, followed by characterization with in situ reflection high-energy electron diffraction, low-energy electron diffraction, Auger-electron spectroscopy, and x-ray photoelectron spectroscopy (XPS). Continuous growth of multiple Mo coverages on a single Si wafer was accomplished with a technique involving a movable sample shutter. The formation of an amorphous interfacial silicide was observed at all substrate temperatures studied: 50°C, 100°C, and 200°C. However, the composition quickly becomes Mo rich as the deposition continues. The data are consistent with a composition profile that has an atomically abrupt transition between Si and amorphous MoSix, where x=2 for the first 4 and then decays with an error-function form with increasing overlayer thickness. The error-function interface-width parameter was found to be 10.0 at 50°C and 12.1 at 200°C. Significant differences were seen between Auger intensities calculated by two standard methods: the derivative-amplitude method and the linear-background integrated-intensity method. We attribute these differences to peak-shape changes (due to the varying chemical environment in the interfacial region) that invalidate the use of the derivative method. The XPS measurements revealed shifts in the energies of the Mo 3d3/2 and Mo 3d5/2 lines due to the reaction with the Si substrate. The maximum peak shift was -0.4 eV and originated from the Mo nearest the Si substrate.

UR - http://www.scopus.com/inward/record.url?scp=0001055146&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001055146&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.44.3854

DO - 10.1103/PhysRevB.44.3854

M3 - Article

AN - SCOPUS:0001055146

VL - 44

SP - 3854

EP - 3863

JO - Physical Review B-Condensed Matter

JF - Physical Review B-Condensed Matter

SN - 0163-1829

IS - 8

ER -