Heat dissipation for high power optically pumped semiconductor vertical external cavity surface emitting lasers

Li Fan, Marc Schillgalies, Mahmoud Fallahi, Thomas R. Nelson, James E. Ehret, Donald L. Agresta, Jerome V Moloney, Jorg Hader, Aramais Zakharian, James Murray

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Optically pumped semiconductor (OPS) vertical external cavity surface emitting lasers (VECSELs) have a number of advantages over conventional semiconductor diode lasers. High power CW operation of the OPS-VECSELs requires proper thermal design of the structure and efficient heat extraction from the active region. To achieve this goal the epitaxial structure should be as close as possible to the heat sink. Furthermore, mechanical strain caused by the mounting method should be avoided. This paper outlines several methods for substrate removal and sample mounting.

Original languageEnglish (US)
Title of host publicationConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Pages79-80
Number of pages2
Volume1
StatePublished - 2003
Event2003 IEEE LEOS Annual Meeting Conference Proceedings - TUCSON, AZ, United States
Duration: Oct 26 2003Oct 30 2003

Other

Other2003 IEEE LEOS Annual Meeting Conference Proceedings
CountryUnited States
CityTUCSON, AZ
Period10/26/0310/30/03

Fingerprint

Surface emitting lasers
Heat losses
Mountings
Semiconductor materials
Semiconductor diodes
Heat sinks
Semiconductor lasers
Substrates
Hot Temperature

ASJC Scopus subject areas

  • Industrial and Manufacturing Engineering
  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Cite this

Fan, L., Schillgalies, M., Fallahi, M., Nelson, T. R., Ehret, J. E., Agresta, D. L., ... Murray, J. (2003). Heat dissipation for high power optically pumped semiconductor vertical external cavity surface emitting lasers. In Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS (Vol. 1, pp. 79-80)

Heat dissipation for high power optically pumped semiconductor vertical external cavity surface emitting lasers. / Fan, Li; Schillgalies, Marc; Fallahi, Mahmoud; Nelson, Thomas R.; Ehret, James E.; Agresta, Donald L.; Moloney, Jerome V; Hader, Jorg; Zakharian, Aramais; Murray, James.

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. Vol. 1 2003. p. 79-80.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Fan, L, Schillgalies, M, Fallahi, M, Nelson, TR, Ehret, JE, Agresta, DL, Moloney, JV, Hader, J, Zakharian, A & Murray, J 2003, Heat dissipation for high power optically pumped semiconductor vertical external cavity surface emitting lasers. in Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. vol. 1, pp. 79-80, 2003 IEEE LEOS Annual Meeting Conference Proceedings, TUCSON, AZ, United States, 10/26/03.
Fan L, Schillgalies M, Fallahi M, Nelson TR, Ehret JE, Agresta DL et al. Heat dissipation for high power optically pumped semiconductor vertical external cavity surface emitting lasers. In Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. Vol. 1. 2003. p. 79-80
Fan, Li ; Schillgalies, Marc ; Fallahi, Mahmoud ; Nelson, Thomas R. ; Ehret, James E. ; Agresta, Donald L. ; Moloney, Jerome V ; Hader, Jorg ; Zakharian, Aramais ; Murray, James. / Heat dissipation for high power optically pumped semiconductor vertical external cavity surface emitting lasers. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. Vol. 1 2003. pp. 79-80
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