Heating and convection in copper polishing

L. Borucki, Z. Li, Ara Philipossian

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Pad thermal data taken with an infrared video camera during chemical mechanical polishing of copper at two different slurry flow rates is analyzed using a model developed to explain pad heating during oxide polishing. After minimal recalibration to match thermal data as a function of time and pad radius at one flow rate, the model is able to correctly predict the variation in temperature as the flow rate is changed. Periodic thermal oscillations in the data that are not present in oxide polish data are also modeled and are attributable to in situ conditioning. Theoretical estimates of the wafer temperature suggest that the temperature rise of the wafer above ambient may be two to three times what is measured on the pad near the leading edge of the wafer. Removal rates calculated based on the wafer temperature are in agreement with measured rates.

Original languageEnglish (US)
Title of host publicationProceedings - Electrochemical Society
EditorsS. Seal, R.L. Opila, K.B. Sundaram, R. Singh
Pages61-67
Number of pages7
Volume21
StatePublished - 2003
Externally publishedYes
EventChemical Mechanical Planarization VI - Proceddings of the International Symposium - Orlando, FL., United States
Duration: Oct 12 2003Oct 17 2003

Other

OtherChemical Mechanical Planarization VI - Proceddings of the International Symposium
CountryUnited States
CityOrlando, FL.
Period10/12/0310/17/03

Fingerprint

Polishing
Copper
Heating
Flow rate
Temperature
Chemical mechanical polishing
Oxides
Video cameras
Infrared radiation
Convection
Hot Temperature

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Borucki, L., Li, Z., & Philipossian, A. (2003). Heating and convection in copper polishing. In S. Seal, R. L. Opila, K. B. Sundaram, & R. Singh (Eds.), Proceedings - Electrochemical Society (Vol. 21, pp. 61-67)

Heating and convection in copper polishing. / Borucki, L.; Li, Z.; Philipossian, Ara.

Proceedings - Electrochemical Society. ed. / S. Seal; R.L. Opila; K.B. Sundaram; R. Singh. Vol. 21 2003. p. 61-67.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Borucki, L, Li, Z & Philipossian, A 2003, Heating and convection in copper polishing. in S Seal, RL Opila, KB Sundaram & R Singh (eds), Proceedings - Electrochemical Society. vol. 21, pp. 61-67, Chemical Mechanical Planarization VI - Proceddings of the International Symposium, Orlando, FL., United States, 10/12/03.
Borucki L, Li Z, Philipossian A. Heating and convection in copper polishing. In Seal S, Opila RL, Sundaram KB, Singh R, editors, Proceedings - Electrochemical Society. Vol. 21. 2003. p. 61-67
Borucki, L. ; Li, Z. ; Philipossian, Ara. / Heating and convection in copper polishing. Proceedings - Electrochemical Society. editor / S. Seal ; R.L. Opila ; K.B. Sundaram ; R. Singh. Vol. 21 2003. pp. 61-67
@inproceedings{e74a4394322145b69fc0474530431ff4,
title = "Heating and convection in copper polishing",
abstract = "Pad thermal data taken with an infrared video camera during chemical mechanical polishing of copper at two different slurry flow rates is analyzed using a model developed to explain pad heating during oxide polishing. After minimal recalibration to match thermal data as a function of time and pad radius at one flow rate, the model is able to correctly predict the variation in temperature as the flow rate is changed. Periodic thermal oscillations in the data that are not present in oxide polish data are also modeled and are attributable to in situ conditioning. Theoretical estimates of the wafer temperature suggest that the temperature rise of the wafer above ambient may be two to three times what is measured on the pad near the leading edge of the wafer. Removal rates calculated based on the wafer temperature are in agreement with measured rates.",
author = "L. Borucki and Z. Li and Ara Philipossian",
year = "2003",
language = "English (US)",
volume = "21",
pages = "61--67",
editor = "S. Seal and R.L. Opila and K.B. Sundaram and R. Singh",
booktitle = "Proceedings - Electrochemical Society",

}

TY - GEN

T1 - Heating and convection in copper polishing

AU - Borucki, L.

AU - Li, Z.

AU - Philipossian, Ara

PY - 2003

Y1 - 2003

N2 - Pad thermal data taken with an infrared video camera during chemical mechanical polishing of copper at two different slurry flow rates is analyzed using a model developed to explain pad heating during oxide polishing. After minimal recalibration to match thermal data as a function of time and pad radius at one flow rate, the model is able to correctly predict the variation in temperature as the flow rate is changed. Periodic thermal oscillations in the data that are not present in oxide polish data are also modeled and are attributable to in situ conditioning. Theoretical estimates of the wafer temperature suggest that the temperature rise of the wafer above ambient may be two to three times what is measured on the pad near the leading edge of the wafer. Removal rates calculated based on the wafer temperature are in agreement with measured rates.

AB - Pad thermal data taken with an infrared video camera during chemical mechanical polishing of copper at two different slurry flow rates is analyzed using a model developed to explain pad heating during oxide polishing. After minimal recalibration to match thermal data as a function of time and pad radius at one flow rate, the model is able to correctly predict the variation in temperature as the flow rate is changed. Periodic thermal oscillations in the data that are not present in oxide polish data are also modeled and are attributable to in situ conditioning. Theoretical estimates of the wafer temperature suggest that the temperature rise of the wafer above ambient may be two to three times what is measured on the pad near the leading edge of the wafer. Removal rates calculated based on the wafer temperature are in agreement with measured rates.

UR - http://www.scopus.com/inward/record.url?scp=3042842771&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3042842771&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:3042842771

VL - 21

SP - 61

EP - 67

BT - Proceedings - Electrochemical Society

A2 - Seal, S.

A2 - Opila, R.L.

A2 - Sundaram, K.B.

A2 - Singh, R.

ER -