High density lithography using attenuated phase shift mask and negative resist

S. Pau, R. Cirelli, K. Bolan, A. G. Timko, J. Frackoviak, G. P. Watson, L. E. Trimble, J. W. Blatchford, O. Nalamasu

Research output: Contribution to journalConference article

4 Scopus citations

Abstract

A technique to print high-density windows using attenuated phase shift mask, negative photoresist and ArF exposure tool is demonstrated. The technique can be implemented types. It use sub-wavelength features and offers higher packing density compared with the use of binary masks and positive photoresists.

Original languageEnglish (US)
Pages (from-to)266-270
Number of pages5
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume4000 (I)
DOIs
StatePublished - 2000
Externally publishedYes
EventOptical Microlithography XIII - Santa Clara, CA, USA
Duration: Mar 1 2000Mar 3 2000

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'High density lithography using attenuated phase shift mask and negative resist'. Together they form a unique fingerprint.

  • Cite this

    Pau, S., Cirelli, R., Bolan, K., Timko, A. G., Frackoviak, J., Watson, G. P., Trimble, L. E., Blatchford, J. W., & Nalamasu, O. (2000). High density lithography using attenuated phase shift mask and negative resist. Proceedings of SPIE - The International Society for Optical Engineering, 4000 (I), 266-270. https://doi.org/10.1117/12.389015