High dose implant strip in FEOL IC manufacturing using a combination of cryogenic and wet cleaning techniques

Souvik Banerjee, Ramesli Borade, Masanobu Sato, Sadao Hirae, Peggi Cross, Srini Raghavan

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Abstract

This paper describes an unique combination of dry and wet cleaning techniques for removing ion implanted photoresist following source/drain implantation step in front end of line (FEOL) integrated device manufacturing process. The dry cleaning comprises of CO2 cryogenic aerosol. The inherent non-oxidizing and non-etching characteristics of the cryogenic aerosol technique, overcomes the current problems with oxidizing plasma process for nigh dose implanted resist strip (HDIS). The paper shows resist removal data from blanket ion implanted photoresist as well as from patterned wafers without damage to the poly lines. The blanket wafer cleaning performance has been characterized using analytical techniques such as EDX, XPS and particle scans with SP1. The patterned wafer cleaning efficiency without damage to the sensitive poly lines is determined using optical microscope, SEM, and KLA patterned wafer inspection system.

Original languageEnglish (US)
Title of host publicationECS Transactions
EditorsJ. Ruzyllo, T. Hattori, R.E. Novak
Pages111-118
Number of pages8
Volume1
Edition3
StatePublished - 2005
Event9th International Symposium on Cleaning Technology in Semiconductor Device Manufacturing - 2005 Fall Meeting of the Electrochemical Society - Los Angeles, CA, United States
Duration: Oct 16 2005Oct 21 2005

Other

Other9th International Symposium on Cleaning Technology in Semiconductor Device Manufacturing - 2005 Fall Meeting of the Electrochemical Society
CountryUnited States
CityLos Angeles, CA
Period10/16/0510/21/05

Fingerprint

Cryogenics
Cleaning
Photoresists
Aerosols
Dry cleaning
Ions
Ion implantation
Energy dispersive spectroscopy
Microscopes
X ray photoelectron spectroscopy
Inspection
Plasmas
Scanning electron microscopy

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Banerjee, S., Borade, R., Sato, M., Hirae, S., Cross, P., & Raghavan, S. (2005). High dose implant strip in FEOL IC manufacturing using a combination of cryogenic and wet cleaning techniques. In J. Ruzyllo, T. Hattori, & R. E. Novak (Eds.), ECS Transactions (3 ed., Vol. 1, pp. 111-118)

High dose implant strip in FEOL IC manufacturing using a combination of cryogenic and wet cleaning techniques. / Banerjee, Souvik; Borade, Ramesli; Sato, Masanobu; Hirae, Sadao; Cross, Peggi; Raghavan, Srini.

ECS Transactions. ed. / J. Ruzyllo; T. Hattori; R.E. Novak. Vol. 1 3. ed. 2005. p. 111-118.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Banerjee, S, Borade, R, Sato, M, Hirae, S, Cross, P & Raghavan, S 2005, High dose implant strip in FEOL IC manufacturing using a combination of cryogenic and wet cleaning techniques. in J Ruzyllo, T Hattori & RE Novak (eds), ECS Transactions. 3 edn, vol. 1, pp. 111-118, 9th International Symposium on Cleaning Technology in Semiconductor Device Manufacturing - 2005 Fall Meeting of the Electrochemical Society, Los Angeles, CA, United States, 10/16/05.
Banerjee S, Borade R, Sato M, Hirae S, Cross P, Raghavan S. High dose implant strip in FEOL IC manufacturing using a combination of cryogenic and wet cleaning techniques. In Ruzyllo J, Hattori T, Novak RE, editors, ECS Transactions. 3 ed. Vol. 1. 2005. p. 111-118
Banerjee, Souvik ; Borade, Ramesli ; Sato, Masanobu ; Hirae, Sadao ; Cross, Peggi ; Raghavan, Srini. / High dose implant strip in FEOL IC manufacturing using a combination of cryogenic and wet cleaning techniques. ECS Transactions. editor / J. Ruzyllo ; T. Hattori ; R.E. Novak. Vol. 1 3. ed. 2005. pp. 111-118
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