High dose implant strip in FEOL IC manufacturing using a combination of cryogenic and wet cleaning techniques

Souvik Banerjee, Ramesli Borade, Masanobu Sato, Sadao Hirae, Peggi Cross, Srini Raghavan

Research output: Contribution to journalConference article

8 Scopus citations

Abstract

This paper describes an unique combination of dry and wet cleaning techniques for removing ion implanted photoresist following source/drain implantation step in front end of line (FEOL) integrated device manufacturing process. The dry cleaning comprises of CO2 cryogenic aerosol. The inherent non-oxidizing and non-etching characteristics of the cryogenic aerosol technique, overcomes the current problems with oxidizing plasma process for nigh dose implanted resist strip (HDIS). The paper shows resist removal data from blanket ion implanted photoresist as well as from patterned wafers without damage to the poly lines. The blanket wafer cleaning performance has been characterized using analytical techniques such as EDX, XPS and particle scans with SP1. The patterned wafer cleaning efficiency without damage to the sensitive poly lines is determined using optical microscope, SEM, and KLA patterned wafer inspection system.

Original languageEnglish (US)
Pages (from-to)111-118
Number of pages8
JournalECS Transactions
Volume1
Issue number3
StatePublished - Dec 1 2005
Event9th International Symposium on Cleaning Technology in Semiconductor Device Manufacturing - 2005 Fall Meeting of the Electrochemical Society - Los Angeles, CA, United States
Duration: Oct 16 2005Oct 21 2005

ASJC Scopus subject areas

  • Engineering(all)

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