HIGH-FREQUENCY MODULATION OF 1. 52 mu M VAPOUR-PHASE TRANSPORTED InGaAsP LASERS.

J. E. Bowers, Thomas L Koch, B. R. Hemenway, D. P. Wilt, T. J. Bridges, E. G. Burkhardt

Research output: Contribution to journalArticle

27 Citations (Scopus)

Abstract

We describe modification to the recently demonstrated vapor-phase-transported laser structure to reduce the parasitic capacitance by an order of magnitude, and increase the 3 db bandwidth for cw 1. 52 mu m lasers to 8 GHz. The parasitic and nonlinear limitations to this bandwidth are discussed.

Original languageEnglish (US)
Pages (from-to)297-299
Number of pages3
JournalElectronics Letters
Volume21
Issue number7
StatePublished - Jan 1 1985
Externally publishedYes

Fingerprint

Frequency modulation
Bandwidth
Lasers
Capacitance
Vapors

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Bowers, J. E., Koch, T. L., Hemenway, B. R., Wilt, D. P., Bridges, T. J., & Burkhardt, E. G. (1985). HIGH-FREQUENCY MODULATION OF 1. 52 mu M VAPOUR-PHASE TRANSPORTED InGaAsP LASERS. Electronics Letters, 21(7), 297-299.

HIGH-FREQUENCY MODULATION OF 1. 52 mu M VAPOUR-PHASE TRANSPORTED InGaAsP LASERS. / Bowers, J. E.; Koch, Thomas L; Hemenway, B. R.; Wilt, D. P.; Bridges, T. J.; Burkhardt, E. G.

In: Electronics Letters, Vol. 21, No. 7, 01.01.1985, p. 297-299.

Research output: Contribution to journalArticle

Bowers, JE, Koch, TL, Hemenway, BR, Wilt, DP, Bridges, TJ & Burkhardt, EG 1985, 'HIGH-FREQUENCY MODULATION OF 1. 52 mu M VAPOUR-PHASE TRANSPORTED InGaAsP LASERS.', Electronics Letters, vol. 21, no. 7, pp. 297-299.
Bowers JE, Koch TL, Hemenway BR, Wilt DP, Bridges TJ, Burkhardt EG. HIGH-FREQUENCY MODULATION OF 1. 52 mu M VAPOUR-PHASE TRANSPORTED InGaAsP LASERS. Electronics Letters. 1985 Jan 1;21(7):297-299.
Bowers, J. E. ; Koch, Thomas L ; Hemenway, B. R. ; Wilt, D. P. ; Bridges, T. J. ; Burkhardt, E. G. / HIGH-FREQUENCY MODULATION OF 1. 52 mu M VAPOUR-PHASE TRANSPORTED InGaAsP LASERS. In: Electronics Letters. 1985 ; Vol. 21, No. 7. pp. 297-299.
@article{4b414d33678048379398acb6a1d6aa8d,
title = "HIGH-FREQUENCY MODULATION OF 1. 52 mu M VAPOUR-PHASE TRANSPORTED InGaAsP LASERS.",
abstract = "We describe modification to the recently demonstrated vapor-phase-transported laser structure to reduce the parasitic capacitance by an order of magnitude, and increase the 3 db bandwidth for cw 1. 52 mu m lasers to 8 GHz. The parasitic and nonlinear limitations to this bandwidth are discussed.",
author = "Bowers, {J. E.} and Koch, {Thomas L} and Hemenway, {B. R.} and Wilt, {D. P.} and Bridges, {T. J.} and Burkhardt, {E. G.}",
year = "1985",
month = "1",
day = "1",
language = "English (US)",
volume = "21",
pages = "297--299",
journal = "Electronics Letters",
issn = "0013-5194",
publisher = "Institution of Engineering and Technology",
number = "7",

}

TY - JOUR

T1 - HIGH-FREQUENCY MODULATION OF 1. 52 mu M VAPOUR-PHASE TRANSPORTED InGaAsP LASERS.

AU - Bowers, J. E.

AU - Koch, Thomas L

AU - Hemenway, B. R.

AU - Wilt, D. P.

AU - Bridges, T. J.

AU - Burkhardt, E. G.

PY - 1985/1/1

Y1 - 1985/1/1

N2 - We describe modification to the recently demonstrated vapor-phase-transported laser structure to reduce the parasitic capacitance by an order of magnitude, and increase the 3 db bandwidth for cw 1. 52 mu m lasers to 8 GHz. The parasitic and nonlinear limitations to this bandwidth are discussed.

AB - We describe modification to the recently demonstrated vapor-phase-transported laser structure to reduce the parasitic capacitance by an order of magnitude, and increase the 3 db bandwidth for cw 1. 52 mu m lasers to 8 GHz. The parasitic and nonlinear limitations to this bandwidth are discussed.

UR - http://www.scopus.com/inward/record.url?scp=0022025297&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0022025297&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0022025297

VL - 21

SP - 297

EP - 299

JO - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 7

ER -