High-frequency modulation of 1.52 µm vapour-phase-transported ingaasp lasers

J. E. Bowers, T. L. Koch, B. R. Hemenway, D. Wilt, T. J. Bridges, E. G. Burkhardt

Research output: Contribution to journalArticle

27 Scopus citations

Abstract

We describe modifications to the recently demonstrated vapour-phase-transported laser structure to reduce the parasitic capacitance by an order of magnitude, and increase the 3 dB bandwidth for CW 1.52 µm lasers to 8 GHz. The parasitic and nonlinear limitations to this bandwidth are discussed.

Original languageEnglish (US)
Pages (from-to)297-299
Number of pages3
JournalElectronics Letters
Volume21
Issue number7
DOIs
StatePublished - Jan 1 1985
Externally publishedYes

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Keywords

  • Lasers and laser applications
  • Modulation
  • Semiconductor lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Bowers, J. E., Koch, T. L., Hemenway, B. R., Wilt, D., Bridges, T. J., & Burkhardt, E. G. (1985). High-frequency modulation of 1.52 µm vapour-phase-transported ingaasp lasers. Electronics Letters, 21(7), 297-299. https://doi.org/10.1049/el:19850213