High-Frequency Modulation Of 1.52 μm Vapour-Phase-Transported Ingaasp Lasers

J. E. Bowers, T. L. Koch, B. R. Hemenway, D. P. Wilt, T. J. Bridges, E. G. Burkhardt

Research output: Contribution to journalArticle

19 Scopus citations

Abstract

We describe modifications to the recently demonstrated vapour-phase-transported laser to reduce the parasitic capacitance by an order of magnitude, and increase the 3 dB bandwidth for CW 1.52 μm lasers to 8 GHz. The parasitic and nonlinear limitations to this bandwidth are discussed.

Original languageEnglish (US)
Pages (from-to)392-393
Number of pages2
JournalElectronics Letters
Volume21
Issue number9
DOIs
StatePublished - Jan 1 1985
Externally publishedYes

Keywords

  • Lasers and laser applications
  • Semiconductor lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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    Bowers, J. E., Koch, T. L., Hemenway, B. R., Wilt, D. P., Bridges, T. J., & Burkhardt, E. G. (1985). High-Frequency Modulation Of 1.52 μm Vapour-Phase-Transported Ingaasp Lasers. Electronics Letters, 21(9), 392-393. https://doi.org/10.1049/el:19850279