High Frequency Modulation of Strained Layer Multiple Quantum Well Optical Amplifiers

U. Koren, B. I. Miller, M. G. Young, T. L. Koch, R. M. Jopson, A. H. Gnauck, J. D. Evankow, M. Chien

Research output: Contribution to journalArticle

16 Scopus citations

Abstract

The use of strained layer multiple quantum well optical amplifiers for high frequency modulation and switching of a laser diode output is described. Modulation bandwidth of 1-8 GHz and digital modulation at 2Gbit/s have been demonstrated.

Original languageEnglish (US)
Pages (from-to)62-64
Number of pages3
JournalElectronics Letters
Volume27
Issue number1
DOIs
StatePublished - Jan 1 1991
Externally publishedYes

Keywords

  • Optical modulation
  • Optical switching
  • Semiconductor lasers

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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  • Cite this

    Koren, U., Miller, B. I., Young, M. G., Koch, T. L., Jopson, R. M., Gnauck, A. H., Evankow, J. D., & Chien, M. (1991). High Frequency Modulation of Strained Layer Multiple Quantum Well Optical Amplifiers. Electronics Letters, 27(1), 62-64. https://doi.org/10.1049/el:19910040