High modal gain in Ga(NAsP)/(BGa)((As)P) heterostructures grown lattice matched on (001) silicon

N. Koukourakis, D. A. Funke, N. C. Gerhardt, M. R. Hofmann, S. Liebich, C. Bückers, S. Zinnkann, M. Zimprich, A. Beyer, S. Chatterjee, S. W. Koch, B. Kunert, K. Volz, W. Stolz

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations


We present modal gain measurements in Ga(NAsP) heterostructures pseudomorphically grown on silicon substrate. Using the variable stripe length method we analyze the modal gain performance of an unprocessed single quantum well sample for different excitation densities. We obtain high modal gain values up to 55 cm-1 at room temperature. These values are comparable to those of common high quality laser material. This demonstrates the high optical quality of the new dilute nitride material Ga(NAsP) and underlines its candidacy for electrically pumped lasing on silicon substrate.

Original languageEnglish (US)
Title of host publicationGallium Nitride Materials and Devices VI
StatePublished - May 13 2011
EventGallium Nitride Materials and Devices VI - San Francisco, CA, United States
Duration: Jan 24 2011Jan 27 2011

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


OtherGallium Nitride Materials and Devices VI
Country/TerritoryUnited States
CitySan Francisco, CA


  • Semiconductor laser
  • Silicon photonics

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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