High-numerical-aperture effects in photoresist

Donis G. Flagello, Thomas D Milster

Research output: Contribution to journalArticle

21 Citations (Scopus)

Abstract

Two-beam and three-beam vector interference in thin photoresist films is used to illustrate the striking differences between s-polarized and p-polarized high-numerical-aperture illumination. Both simulations and experiments are performed for several cases, including undyed photoresist on silicon, dyed photoresist on silicon, and the addition of an antireflective layer between the photoresist and the silicon. A 0.85 numerical-aperture system is examined. The major differences between s- and p-polarized illumination include elliptical versus rectangular features and lower contrast for p-polarized images.

Original languageEnglish (US)
Pages (from-to)8944-8951
Number of pages8
JournalApplied Optics
Volume36
Issue number34
StatePublished - 1997

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Photoresists
numerical aperture
photoresists
Silicon
silicon
Lighting
illumination
sands
Sand
interference
simulation
Experiments

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

High-numerical-aperture effects in photoresist. / Flagello, Donis G.; Milster, Thomas D.

In: Applied Optics, Vol. 36, No. 34, 1997, p. 8944-8951.

Research output: Contribution to journalArticle

Flagello, DG & Milster, TD 1997, 'High-numerical-aperture effects in photoresist', Applied Optics, vol. 36, no. 34, pp. 8944-8951.
Flagello, Donis G. ; Milster, Thomas D. / High-numerical-aperture effects in photoresist. In: Applied Optics. 1997 ; Vol. 36, No. 34. pp. 8944-8951.
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