High peak power operation of a 1-μm GaAs-based optically pumped semiconductor laser

Alexandre Laurain, Tsuei Lian Wang, Michael J. Yarborough, Jorg Hader, Jerome V Moloney, Stephan W Koch, Bernardette Kunert, Wolfgang Stolz

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We report room-temperature high-peak-power operation of an optically pumped semiconductor laser based on the InGaAs/GaAs material system. We present the design of the semiconductor structure and optimization strategies to extract the maximum pulsed peak power. The gain structure was pumped by a 775-nm Alexandrite laser with a pulsewidth adjustable from 400 ns to 1 μs and a repetition rate of 3 Hz. A new record peak power of 400 W at a wavelength of 1020 nm was obtained with a Gaussian-shaped submicrosecond pulse. An optical-to-optical efficiency of 28% is demonstrated at maximum power. The key parameters limiting the output power are discussed.

Original languageEnglish (US)
Article number2179643
Pages (from-to)380-382
Number of pages3
JournalIEEE Photonics Technology Letters
Volume24
Issue number5
DOIs
StatePublished - 2012

Fingerprint

Semiconductor lasers
semiconductor lasers
Semiconductor materials
Wavelength
Lasers
alexandrite
Temperature
repetition
optimization
output
room temperature
pulses
wavelengths
lasers
gallium arsenide

Keywords

  • High peak power
  • Optically pumped semiconductor laser
  • Pulsed laser
  • Vertical-external-cavity surface-emitting lasers (VECSELs)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Electronic, Optical and Magnetic Materials

Cite this

High peak power operation of a 1-μm GaAs-based optically pumped semiconductor laser. / Laurain, Alexandre; Wang, Tsuei Lian; Yarborough, Michael J.; Hader, Jorg; Moloney, Jerome V; Koch, Stephan W; Kunert, Bernardette; Stolz, Wolfgang.

In: IEEE Photonics Technology Letters, Vol. 24, No. 5, 2179643, 2012, p. 380-382.

Research output: Contribution to journalArticle

Laurain, Alexandre ; Wang, Tsuei Lian ; Yarborough, Michael J. ; Hader, Jorg ; Moloney, Jerome V ; Koch, Stephan W ; Kunert, Bernardette ; Stolz, Wolfgang. / High peak power operation of a 1-μm GaAs-based optically pumped semiconductor laser. In: IEEE Photonics Technology Letters. 2012 ; Vol. 24, No. 5. pp. 380-382.
@article{817d63b5d3004da284edbb2c591b9e3c,
title = "High peak power operation of a 1-μm GaAs-based optically pumped semiconductor laser",
abstract = "We report room-temperature high-peak-power operation of an optically pumped semiconductor laser based on the InGaAs/GaAs material system. We present the design of the semiconductor structure and optimization strategies to extract the maximum pulsed peak power. The gain structure was pumped by a 775-nm Alexandrite laser with a pulsewidth adjustable from 400 ns to 1 μs and a repetition rate of 3 Hz. A new record peak power of 400 W at a wavelength of 1020 nm was obtained with a Gaussian-shaped submicrosecond pulse. An optical-to-optical efficiency of 28{\%} is demonstrated at maximum power. The key parameters limiting the output power are discussed.",
keywords = "High peak power, Optically pumped semiconductor laser, Pulsed laser, Vertical-external-cavity surface-emitting lasers (VECSELs)",
author = "Alexandre Laurain and Wang, {Tsuei Lian} and Yarborough, {Michael J.} and Jorg Hader and Moloney, {Jerome V} and Koch, {Stephan W} and Bernardette Kunert and Wolfgang Stolz",
year = "2012",
doi = "10.1109/LPT.2011.2179643",
language = "English (US)",
volume = "24",
pages = "380--382",
journal = "IEEE Photonics Technology Letters",
issn = "1041-1135",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "5",

}

TY - JOUR

T1 - High peak power operation of a 1-μm GaAs-based optically pumped semiconductor laser

AU - Laurain, Alexandre

AU - Wang, Tsuei Lian

AU - Yarborough, Michael J.

AU - Hader, Jorg

AU - Moloney, Jerome V

AU - Koch, Stephan W

AU - Kunert, Bernardette

AU - Stolz, Wolfgang

PY - 2012

Y1 - 2012

N2 - We report room-temperature high-peak-power operation of an optically pumped semiconductor laser based on the InGaAs/GaAs material system. We present the design of the semiconductor structure and optimization strategies to extract the maximum pulsed peak power. The gain structure was pumped by a 775-nm Alexandrite laser with a pulsewidth adjustable from 400 ns to 1 μs and a repetition rate of 3 Hz. A new record peak power of 400 W at a wavelength of 1020 nm was obtained with a Gaussian-shaped submicrosecond pulse. An optical-to-optical efficiency of 28% is demonstrated at maximum power. The key parameters limiting the output power are discussed.

AB - We report room-temperature high-peak-power operation of an optically pumped semiconductor laser based on the InGaAs/GaAs material system. We present the design of the semiconductor structure and optimization strategies to extract the maximum pulsed peak power. The gain structure was pumped by a 775-nm Alexandrite laser with a pulsewidth adjustable from 400 ns to 1 μs and a repetition rate of 3 Hz. A new record peak power of 400 W at a wavelength of 1020 nm was obtained with a Gaussian-shaped submicrosecond pulse. An optical-to-optical efficiency of 28% is demonstrated at maximum power. The key parameters limiting the output power are discussed.

KW - High peak power

KW - Optically pumped semiconductor laser

KW - Pulsed laser

KW - Vertical-external-cavity surface-emitting lasers (VECSELs)

UR - http://www.scopus.com/inward/record.url?scp=84863150272&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84863150272&partnerID=8YFLogxK

U2 - 10.1109/LPT.2011.2179643

DO - 10.1109/LPT.2011.2179643

M3 - Article

VL - 24

SP - 380

EP - 382

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

SN - 1041-1135

IS - 5

M1 - 2179643

ER -