High power 1.25 μm InAs quantum dot vertical external-cavity surface-emitting laser

Alexander R. Albrecht, Christopher P. Hains, Thomas J. Rotter, Andreas Stintz, Kevin J. Malloy, Ganesh Balakrishnan, Jerome V. Moloney

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

The authors demonstrate InAs quantum dot (QD)-based optically pumped vertical external-cavity surface-emitting lasers grown by molecular beam epitaxy. Active region designs utilizing two different resonant periodic gain (RPG) structures are compared. The first RPG structure is a more traditional design consisting of three QD layers per antinode of the E-field standing wave, repeated four times, for a total of 12 QD layers. The second RPG has a single-QD layer per antinode, repeated 12 times. The single-QD layer per antinode structure allows for both superior strain relief as well as more complete pump absorption and thus results in significantly improved device performance over the traditional multi-QD layer per antinode design. The authors were able to demonstrate over 3 W of output power at room temperature using a thermal grade polycrystalline chemical-vapor deposition diamond heat spreader mounted on the backside of a sample thinned by mechanical polishing.

Original languageEnglish (US)
Article number03C113
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume29
Issue number3
DOIs
StatePublished - May 2011

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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