High-power, high-speed 1.3-μm semi-insulating-blocked distributed-feedback lasers

U. Koren, T. L. Koch, P. J. Corvini, B. I. Miller, G. Eisenstein, R. S. Tucker, Y. K. Su, R. J. Capik

Research output: Contribution to journalArticle

8 Scopus citations

Abstract

We describe a high-performance 1.3-μm InGaAsP/InP distributed feedback buried heterostructure laser which is compatible with all-vapor-phase growth technology. Current confinement is provided by metalorganic vapor-phase growth of semi-insulating InP blocking layers. The laser has a small-signal bandwidth of 12.5 GHz, a large signal digital capability at 16 Gb/s, and maintains single-frequency operation to output powers as high as 23 mW.

Original languageEnglish (US)
Pages (from-to)4785-4787
Number of pages3
JournalJournal of Applied Physics
Volume64
Issue number9
DOIs
StatePublished - Dec 1 1988
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Koren, U., Koch, T. L., Corvini, P. J., Miller, B. I., Eisenstein, G., Tucker, R. S., Su, Y. K., & Capik, R. J. (1988). High-power, high-speed 1.3-μm semi-insulating-blocked distributed-feedback lasers. Journal of Applied Physics, 64(9), 4785-4787. https://doi.org/10.1063/1.341201