High-power optically pumped semiconductor laser at 1040 nm

Tsuei Lian Wang, Yushi Kaneda, J. M. Yarborough, Jörg Hader, Jerome V. Moloney, Alexej Chernikov, Sangam Chatterjee, Stephan W. Koch, Bernardette Kunert, Wolfgang Stolz

Research output: Contribution to journalArticle

83 Scopus citations


We demonstrate near-diffraction limited (M2 ≈ 1.5) output up to 23.8 W with optical-to-optical efficiency 27% and slope efficiency 32.4% and 40.7 W of multimode output from an optically pumped semiconductor laser at 1040 nm. Temperature-dependent photoluminescence measurements confirm accurate epitaxial growth according to the design thereby enhancing the effective gain.

Original languageEnglish (US)
Article number5422654
Pages (from-to)661-663
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number9
StatePublished - Apr 22 2010


  • Micro-cavity resonance
  • Optically pumped semiconductor laser (OPSL)
  • Power scaling

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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  • Cite this

    Wang, T. L., Kaneda, Y., Yarborough, J. M., Hader, J., Moloney, J. V., Chernikov, A., Chatterjee, S., Koch, S. W., Kunert, B., & Stolz, W. (2010). High-power optically pumped semiconductor laser at 1040 nm. IEEE Photonics Technology Letters, 22(9), 661-663. [5422654]. https://doi.org/10.1109/LPT.2010.2043731