High-power semiconductor lasers

M. Fallahi, R. Bedford

Research output: Chapter in Book/Report/Conference proceedingChapter

1 Scopus citations

Abstract

Over the last decades, high-power and high-brightness semiconductor lasers have transformed the solid-state laser, telecommunication, medical and military markets. This chapter covers concepts, characteristics and challenges of high-power semiconductor lasers. We begin by describing general considerations including epitaxial design, laser cavity designs and packaging specific to high-power lasers. We introduce several common high-power and high-brightness semiconductor lasers such as Fabry-Pérot lasers, grating-based lasers, large mode-area lasers, and optically pumped lasers, as well as concepts for long-wavelength operation. Arrays of devices for ultra-high-power are introduced, and device reliability challenges are addressed.

Original languageEnglish (US)
Title of host publicationSemiconductor Lasers
Subtitle of host publicationFundamentals and Applications
PublisherElsevier Ltd.
Pages81-120
Number of pages40
ISBN (Print)9780857091215
DOIs
StatePublished - Apr 2013

Keywords

  • Brightness
  • Broad-area lasers
  • Catastrophic optical mirror damage
  • Distributed Bragg reflector (DBR)
  • Distributed feedback (DFB)
  • Figures-of-merits
  • High power
  • Laser array
  • Long wavelength
  • Passivation
  • Semiconductor lasers
  • Tapered cavity
  • Vertical-external-cavity suface-emitting laser (VECSEL)

ASJC Scopus subject areas

  • Engineering(all)

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  • Cite this

    Fallahi, M., & Bedford, R. (2013). High-power semiconductor lasers. In Semiconductor Lasers: Fundamentals and Applications (pp. 81-120). Elsevier Ltd.. https://doi.org/10.1533/9780857096401.1.81