High power visible laser by intracavity frequency doubling of InGaAs/GaAs semiconductor laser

Mahmoud Fallahi, Chris Hessenius, Yushi Kaneda, Jörg Hader, Jerome V. Moloney, Bernardette Kunert, Wolfgang Stolz, Stephan W. Koch

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Fundamental operation and Intra-cavity frequency doubling of a highly strained InGaAs/GaAs vertical-external-cavity surface-emitting laser operating around 1175 nm is reported. Multi-watt tunable laser in the yellow-orange band is achieved. Over 10 nm tuning is demonstrated.

Original languageEnglish (US)
Title of host publicationNonlinear Optics
Subtitle of host publicationMaterials, Fundamentals and Applications, NLO 2009
PublisherOptical Society of America
ISBN (Print)9781557528735
StatePublished - Jan 1 2009
EventNonlinear Optics: Materials, Fundamentals and Applications, NLO 2009 - Honolulu, HI, United States
Duration: Jul 12 2009Jul 17 2009

Publication series

NameOptics InfoBase Conference Papers
ISSN (Electronic)2162-2701

Other

OtherNonlinear Optics: Materials, Fundamentals and Applications, NLO 2009
CountryUnited States
CityHonolulu, HI
Period7/12/097/17/09

ASJC Scopus subject areas

  • Instrumentation
  • Atomic and Molecular Physics, and Optics

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  • Cite this

    Fallahi, M., Hessenius, C., Kaneda, Y., Hader, J., Moloney, J. V., Kunert, B., Stolz, W., & Koch, S. W. (2009). High power visible laser by intracavity frequency doubling of InGaAs/GaAs semiconductor laser. In Nonlinear Optics: Materials, Fundamentals and Applications, NLO 2009 (Optics InfoBase Conference Papers). Optical Society of America.