High quality low-dose low-energy SIMOX implanted in high current oxygen implanter

M. J. Anc, M. Farley, J. Jiao, S. Seraphin, J. Kirchhoff, P. J. McMarr, H. L. Hughes

Research output: Contribution to conferencePaper

2 Scopus citations

Abstract

Separation by implantation of oxygen (SIMOX) structures were formed with an ion energy of 65 keV in Ibis 1000 high current oxygen implanter. The Si substrate temperature was 500 °C and beam current was 40 mA during implantation. Doses in the range of 0.15×1018 to 0.7×1018 O+/cm2 were implanted into the 〈100〉, p-type 10-20 Ohm-cm, 150 mm-diameter Si wafers. Implanted wafers were annealed at 1350 °C in Ar and the defect density of the Si layer was determined using the enhanced Secco etch technique and optical microscopy. The integrity of the buried oxide (BOX) was examined by measuring the current-voltage characteristics of the BOX capacitors.

Original languageEnglish (US)
Pages41-42
Number of pages2
StatePublished - Dec 1 1998
EventProceedings of the 1998 IEEE International SOI Conference - Stuart, FL, USA
Duration: Oct 5 1998Oct 8 1998

Other

OtherProceedings of the 1998 IEEE International SOI Conference
CityStuart, FL, USA
Period10/5/9810/8/98

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Anc, M. J., Farley, M., Jiao, J., Seraphin, S., Kirchhoff, J., McMarr, P. J., & Hughes, H. L. (1998). High quality low-dose low-energy SIMOX implanted in high current oxygen implanter. 41-42. Paper presented at Proceedings of the 1998 IEEE International SOI Conference, Stuart, FL, USA, .