High-reliability, high-temperature 30 mW single-mode laser diodes at 650 nm

Bo Lu, J. S. Osinski, Thomas L Koch

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A high-power 650-nm GaInP/AlGaInP single-mode laser with 100 mW catastrophic optical damage (COD) power and 135 K characteristic temperature was developed. Present life-tests demonstrated more than 900 hours of life at 30 mW cw and 50 °C with little degradation. The 650-nm laser epitaxial structure consists of a GaInP/AlGaInP quantum well active region between n-AlInP and P-AlInP cladding layers. A heavily p-doped GaAs layer acted as the contact layer. Laser bars were cleaved and coated with low and high reflectivity at front and rear facets. Devices were bonded p-down on standard 9-mm window packages.

Original languageEnglish (US)
Title of host publicationConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Editors Anon
PublisherIEEE
Pages336-337
Number of pages2
Volume11
StatePublished - 1997
Externally publishedYes
EventProceedings of the 1997 Conference on Lasers and Electro-Optics, CLEO - Baltimore, MD, USA
Duration: May 18 1997May 23 1997

Other

OtherProceedings of the 1997 Conference on Lasers and Electro-Optics, CLEO
CityBaltimore, MD, USA
Period5/18/975/23/97

Fingerprint

Semiconductor lasers
Lasers
Laser modes
Semiconductor quantum wells
Degradation
Temperature

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering

Cite this

Lu, B., Osinski, J. S., & Koch, T. L. (1997). High-reliability, high-temperature 30 mW single-mode laser diodes at 650 nm. In Anon (Ed.), Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS (Vol. 11, pp. 336-337). IEEE.

High-reliability, high-temperature 30 mW single-mode laser diodes at 650 nm. / Lu, Bo; Osinski, J. S.; Koch, Thomas L.

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. ed. / Anon. Vol. 11 IEEE, 1997. p. 336-337.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Lu, B, Osinski, JS & Koch, TL 1997, High-reliability, high-temperature 30 mW single-mode laser diodes at 650 nm. in Anon (ed.), Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. vol. 11, IEEE, pp. 336-337, Proceedings of the 1997 Conference on Lasers and Electro-Optics, CLEO, Baltimore, MD, USA, 5/18/97.
Lu B, Osinski JS, Koch TL. High-reliability, high-temperature 30 mW single-mode laser diodes at 650 nm. In Anon, editor, Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. Vol. 11. IEEE. 1997. p. 336-337
Lu, Bo ; Osinski, J. S. ; Koch, Thomas L. / High-reliability, high-temperature 30 mW single-mode laser diodes at 650 nm. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS. editor / Anon. Vol. 11 IEEE, 1997. pp. 336-337
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