High-resolution optical lithography with a near-field scanning subwavelength aperture

Fred F. Froehlich, Tom D. Milster, R. Uber

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Scopus citations

Abstract

We report on a novel method for generating sub-micron lithographic patterns in photoresist through the use of a scanned sub-wavelength optical aperture. The aperture consists of the tip of a single-mode optical fiber that is drawn down to a diameter of 80 nm and coated with aluminum. The fiber tip is manipulated with a modified scanning tunneling microscope (STM) that brings the tip into proximity of a photoresist-coated substrate. The resolution is primarily a function of the aperture diameter and tip-to-sample separation. A linewidth of 200 nm has been achieved in preliminary experiments.

Original languageEnglish (US)
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
PublisherPubl by Int Soc for Optical Engineering
Pages312-320
Number of pages9
ISBN (Print)0819409243
StatePublished - Jan 1 1993
EventMiniature and Micro-Optics: Fabrication and System Applications II - San Diego, CA, USA
Duration: Jul 19 1992Jul 20 1992

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume1751
ISSN (Print)0277-786X

Other

OtherMiniature and Micro-Optics: Fabrication and System Applications II
CitySan Diego, CA, USA
Period7/19/927/20/92

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Froehlich, F. F., Milster, T. D., & Uber, R. (1993). High-resolution optical lithography with a near-field scanning subwavelength aperture. In Proceedings of SPIE - The International Society for Optical Engineering (pp. 312-320). (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 1751). Publ by Int Soc for Optical Engineering.