Abstract
We analyze the modal gain of Ga(NAsP) multi quantum-well heterostructures pseudomorphically grown on (001) silicon substrate by metal-organic vapor-phase epitaxy. Using the variable stripe length method, we obtain high modal gain values up to 78 cm -1 at room temperature that are comparable to the values of common high quality III-V laser material. We find good agreement between experimental results and theoretically calculated gain spectra obtained using a microscopic model. The results underline the high potential of Ga(NAsP) as an active material for directly electrically pumped lasers on silicon substrate.
Original language | English (US) |
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Article number | 092107 |
Journal | Applied Physics Letters |
Volume | 100 |
Issue number | 9 |
DOIs | |
State | Published - Feb 27 2012 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)