High room-temperature optical gain in Ga(NAsP)/Si heterostructures

N. Koukourakis, C. Bückers, D. A. Funke, N. C. Gerhardt, S. Liebich, S. Chatterjee, C. Lange, M. Zimprich, K. Volz, W. Stolz, B. Kunert, S. W. Koch, M. R. Hofmann

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Abstract

We analyze the modal gain of Ga(NAsP) multi quantum-well heterostructures pseudomorphically grown on (001) silicon substrate by metal-organic vapor-phase epitaxy. Using the variable stripe length method, we obtain high modal gain values up to 78 cm -1 at room temperature that are comparable to the values of common high quality III-V laser material. We find good agreement between experimental results and theoretically calculated gain spectra obtained using a microscopic model. The results underline the high potential of Ga(NAsP) as an active material for directly electrically pumped lasers on silicon substrate.

Original languageEnglish (US)
Article number092107
JournalApplied Physics Letters
Volume100
Issue number9
DOIs
StatePublished - Feb 27 2012

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Koukourakis, N., Bückers, C., Funke, D. A., Gerhardt, N. C., Liebich, S., Chatterjee, S., Lange, C., Zimprich, M., Volz, K., Stolz, W., Kunert, B., Koch, S. W., & Hofmann, M. R. (2012). High room-temperature optical gain in Ga(NAsP)/Si heterostructures. Applied Physics Letters, 100(9), [092107]. https://doi.org/10.1063/1.3690886