High room-temperature optical gain in Ga(NAsP)/Si heterostructures

N. Koukourakis; C. Bückers; D. A. Funke; N. C. Gerhardt; S. Liebich; S. Chatterjee; C. Lange; M. Zimprich; K. Volz; W. Stolz; B. Kunert; S. W. Koch; M. R. Hofmann

doi:10.1063/1.3690886

High room-temperature optical gain in Ga(NAsP)/Si heterostructures

N. Koukourakis, C. Bückers, D. A. Funke, N. C. Gerhardt, S. Liebich, S. Chatterjee, C. Lange, M. Zimprich, K. Volz, W. Stolz, B. Kunert, S. W. Koch, M. R. Hofmann

Optical Sciences, College of

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

We analyze the modal gain of Ga(NAsP) multi quantum-well heterostructures pseudomorphically grown on (001) silicon substrate by metal-organic vapor-phase epitaxy. Using the variable stripe length method, we obtain high modal gain values up to 78 cm ^-1 at room temperature that are comparable to the values of common high quality III-V laser material. We find good agreement between experimental results and theoretically calculated gain spectra obtained using a microscopic model. The results underline the high potential of Ga(NAsP) as an active material for directly electrically pumped lasers on silicon substrate.

Original language	English (US)
Article number	092107
Journal	Applied Physics Letters
Volume	100
Issue number	9
DOIs	https://doi.org/10.1063/1.3690886
State	Published - Feb 27 2012

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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High room-temperature optical gain in Ga(NAsP)/Si heterostructures. / Koukourakis, N.; Bückers, C.; Funke, D. A.; Gerhardt, N. C.; Liebich, S.; Chatterjee, S.; Lange, C.; Zimprich, M.; Volz, K.; Stolz, W.; Kunert, B.; Koch, S. W.; Hofmann, M. R.

In: Applied Physics Letters, Vol. 100, No. 9, 092107, 27.02.2012.

Research output: Contribution to journal › Article › peer-review

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title = "High room-temperature optical gain in Ga(NAsP)/Si heterostructures",

abstract = "We analyze the modal gain of Ga(NAsP) multi quantum-well heterostructures pseudomorphically grown on (001) silicon substrate by metal-organic vapor-phase epitaxy. Using the variable stripe length method, we obtain high modal gain values up to 78 cm -1 at room temperature that are comparable to the values of common high quality III-V laser material. We find good agreement between experimental results and theoretically calculated gain spectra obtained using a microscopic model. The results underline the high potential of Ga(NAsP) as an active material for directly electrically pumped lasers on silicon substrate.",

author = "N. Koukourakis and C. B{\"u}ckers and Funke, {D. A.} and Gerhardt, {N. C.} and S. Liebich and S. Chatterjee and C. Lange and M. Zimprich and K. Volz and W. Stolz and B. Kunert and Koch, {S. W.} and Hofmann, {M. R.}",

note = "Funding Information: The authors gratefully thank the German Ministry of Education and Research (BMBF) and the German Science Foundation (DFG) for support within the Project MonoLaSi.",

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AU - Koukourakis, N.

AU - Bückers, C.

AU - Funke, D. A.

AU - Gerhardt, N. C.

AU - Liebich, S.

AU - Chatterjee, S.

AU - Lange, C.

AU - Zimprich, M.

AU - Volz, K.

AU - Stolz, W.

AU - Kunert, B.

AU - Koch, S. W.

AU - Hofmann, M. R.

N1 - Funding Information: The authors gratefully thank the German Ministry of Education and Research (BMBF) and the German Science Foundation (DFG) for support within the Project MonoLaSi.

PY - 2012/2/27

Y1 - 2012/2/27

N2 - We analyze the modal gain of Ga(NAsP) multi quantum-well heterostructures pseudomorphically grown on (001) silicon substrate by metal-organic vapor-phase epitaxy. Using the variable stripe length method, we obtain high modal gain values up to 78 cm -1 at room temperature that are comparable to the values of common high quality III-V laser material. We find good agreement between experimental results and theoretically calculated gain spectra obtained using a microscopic model. The results underline the high potential of Ga(NAsP) as an active material for directly electrically pumped lasers on silicon substrate.

AB - We analyze the modal gain of Ga(NAsP) multi quantum-well heterostructures pseudomorphically grown on (001) silicon substrate by metal-organic vapor-phase epitaxy. Using the variable stripe length method, we obtain high modal gain values up to 78 cm -1 at room temperature that are comparable to the values of common high quality III-V laser material. We find good agreement between experimental results and theoretically calculated gain spectra obtained using a microscopic model. The results underline the high potential of Ga(NAsP) as an active material for directly electrically pumped lasers on silicon substrate.

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