High sensitivity operation of discrete solid state detectors at 4 K

G. H. Rieke, E. F. Montgomery, M. J. Lebofsky, P. R. Eisenhardt

Research output: Contribution to journalArticlepeer-review

20 Scopus citations

Abstract

Techniques are described to allow operation of discrete solid state detectors at 4 K with optimized junction field effect transistor (JFET) amplifiers. Three detector types cover the 0.6-4μpm spectral range with a noise equivalent power (NEP) of ∼10−16 Hz−1/2 for two of the types and potential improvement to this performance for the third. Lower NEPs can be anticipated at longer IR wavelengths.

Original languageEnglish (US)
Pages (from-to)814-818
Number of pages5
JournalApplied optics
Volume20
Issue number5
DOIs
StatePublished - Mar 1981

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Engineering (miscellaneous)
  • Electrical and Electronic Engineering

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