HIGH SENSITIVITY OPERATION OF DISCRETE SOLID STATE DETECTORS AT 4 K.

George H. Rieke, E. F. Montgomery, M. J. Lebofsky, P. R. Eisenhardt

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

Techniques are presented that allow operation of discrete solid state detectors at 4 K with optimized junction field effect transistor (JFET) amplifiers. Three detector types cover the 0. 6 - 4- mu m spectral range with a noise equivalent power (NEP) of approximately 10** minus **1**6 Hz** minus ** one-half for two of the types and potential improvement to this performance for the third. Lower NEPs can be anticipated at longer IR wavelengths.

Original languageEnglish (US)
Pages (from-to)814-818
Number of pages5
JournalApplied Optics
Volume20
Issue number4
StatePublished - Mar 1 1981

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transistor amplifiers
Detectors
solid state
JFET
sensitivity
detectors
Field effect transistors
Wavelength
wavelengths

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Rieke, G. H., Montgomery, E. F., Lebofsky, M. J., & Eisenhardt, P. R. (1981). HIGH SENSITIVITY OPERATION OF DISCRETE SOLID STATE DETECTORS AT 4 K. Applied Optics, 20(4), 814-818.

HIGH SENSITIVITY OPERATION OF DISCRETE SOLID STATE DETECTORS AT 4 K. / Rieke, George H.; Montgomery, E. F.; Lebofsky, M. J.; Eisenhardt, P. R.

In: Applied Optics, Vol. 20, No. 4, 01.03.1981, p. 814-818.

Research output: Contribution to journalArticle

Rieke, GH, Montgomery, EF, Lebofsky, MJ & Eisenhardt, PR 1981, 'HIGH SENSITIVITY OPERATION OF DISCRETE SOLID STATE DETECTORS AT 4 K.', Applied Optics, vol. 20, no. 4, pp. 814-818.
Rieke GH, Montgomery EF, Lebofsky MJ, Eisenhardt PR. HIGH SENSITIVITY OPERATION OF DISCRETE SOLID STATE DETECTORS AT 4 K. Applied Optics. 1981 Mar 1;20(4):814-818.
Rieke, George H. ; Montgomery, E. F. ; Lebofsky, M. J. ; Eisenhardt, P. R. / HIGH SENSITIVITY OPERATION OF DISCRETE SOLID STATE DETECTORS AT 4 K. In: Applied Optics. 1981 ; Vol. 20, No. 4. pp. 814-818.
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