High Temperature Operation of Circular-Grating Surface-Emitting DBR Lasers Fabricated on an InGaAs/GaAs Structure

M. Fallahi, M. Dion, F. Chatenoud, I. M. Templeton, R. Barber

Research output: Contribution to journalArticle

5 Scopus citations


We demonstrate high temperature operation of circular-grating surface-emitting distributed Bragg reflector lasers. The structure is a strained InGaAs/GaAs double quantum well Circular gratings are defined by electron beam lithography. No epitaxial regrowth is used. A surface emission power of over 40 mW under pulsed operation at temperatures of up to 80°C is obtained without saturation. A fixed single mode operation was achieved over a temperature range of 60 degrees.

Original languageEnglish (US)
Pages (from-to)326-329
Number of pages4
JournalIEEE Photonics Technology Letters
Issue number3
StatePublished - Mar 1994
Externally publishedYes


ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this