High temperature operation of circular-grating surface-emitting DBR lasers fabricated on an InGaAs/GaAs structure

Mahmoud Fallahi, M. Dion, F. Chatenoud, I. M. Templeton, R. Barber

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We demonstrate high temperature operation of circular-grating surface-emitting distributed Bragg reflector lasers. The structure is a strained InGaAs/GaAs double quantum well. Circular gratings are defined by electron beam lithography. No epitaxial regrowth is used. A surface emission power of over 40 mW under pulsed operation at temperatures of up to 80 °C is obtained without saturation. A fixed single mode operation was achieved over a temperature range of 60 degrees.

Original languageEnglish (US)
Pages (from-to)326-329
Number of pages4
JournalIEEE Photonics Technology Letters
Volume6
Issue number3
DOIs
StatePublished - Mar 1994
Externally publishedYes

Fingerprint

DBR lasers
High temperature operations
Surface emitting lasers
surface emitting lasers
gratings
Electron beam lithography
Semiconductor quantum wells
Temperature
lithography
quantum wells
electron beams
saturation
temperature
gallium arsenide

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)
  • Atomic and Molecular Physics, and Optics

Cite this

High temperature operation of circular-grating surface-emitting DBR lasers fabricated on an InGaAs/GaAs structure. / Fallahi, Mahmoud; Dion, M.; Chatenoud, F.; Templeton, I. M.; Barber, R.

In: IEEE Photonics Technology Letters, Vol. 6, No. 3, 03.1994, p. 326-329.

Research output: Contribution to journalArticle

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