High-temperature operation of electrical injection type-II (GaIn)As/Ga(AsSb)/(GaIn)As "w"-quantum well lasers emitting at 1.3 μm

C. Fuchs; A. Brüggemann; M. J. Weseloh; C. Berger; C. Möller; S. Reinhard; J. Hader; J. V. Moloney; A. Bäumner; S. W. Koch; W. Stolz

doi:10.1038/s41598-018-19189-1

High-temperature operation of electrical injection type-II (GaIn)As/Ga(AsSb)/(GaIn)As "w"-quantum well lasers emitting at 1.3 μm

C. Fuchs, A. Brüggemann, M. J. Weseloh, C. Berger, C. Möller, S. Reinhard, J. Hader, J. V. Moloney, A. Bäumner, S. W. Koch, W. Stolz

Optical Sciences, College of

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Abstract

Electrical injection lasers emitting in the 1.3 μm wavelength regime based on (GaIn)As/Ga(AsSb)/(GaIn)As type-II double "W"-quantum well heterostructures grown on GaAs substrate are demonstrated. The structure is designed by applying a fully microscopic theory and fabricated using metal organic vapor phase epitaxy. Temperature-dependent electroluminescence measurements as well as broad-area edge-emitting laser studies are carried out in order to characterize the resulting devices. Laser emission based on the fundamental type-II transition is demonstrated for a 975 μm long laser bar in the temperature range between 10 °C and 100 °C. The device exhibits a differential efficiency of 41 % and a threshold current density of 1.0 kA/cm² at room temperature. Temperature-dependent laser studies reveal characteristic temperatures of T₀ = (132 ± 3) K over the whole temperature range and T₁ = (159 ± 13) K between 10 °C and 70 °C and T₁ = (40 ± 1) K between 80 °C and 100 °C.

Original language	English (US)
Article number	1422
Journal	Scientific reports
Volume	8
Issue number	1
DOIs	https://doi.org/10.1038/s41598-018-19189-1
State	Published - Dec 1 2018

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High-temperature operation of electrical injection type-II (GaIn)As/Ga(AsSb)/(GaIn)As "w"-quantum well lasers emitting at 1.3 μm. / Fuchs, C.; Brüggemann, A.; Weseloh, M. J.; Berger, C.; Möller, C.; Reinhard, S.; Hader, J.; Moloney, J. V.; Bäumner, A.; Koch, S. W.; Stolz, W.

In: Scientific reports, Vol. 8, No. 1, 1422, 01.12.2018.

Research output: Contribution to journal › Article › peer-review

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title = "High-temperature operation of electrical injection type-II (GaIn)As/Ga(AsSb)/(GaIn)As {"}w{"}-quantum well lasers emitting at 1.3 μm",

abstract = "Electrical injection lasers emitting in the 1.3 μm wavelength regime based on (GaIn)As/Ga(AsSb)/(GaIn)As type-II double {"}W{"}-quantum well heterostructures grown on GaAs substrate are demonstrated. The structure is designed by applying a fully microscopic theory and fabricated using metal organic vapor phase epitaxy. Temperature-dependent electroluminescence measurements as well as broad-area edge-emitting laser studies are carried out in order to characterize the resulting devices. Laser emission based on the fundamental type-II transition is demonstrated for a 975 μm long laser bar in the temperature range between 10 °C and 100 °C. The device exhibits a differential efficiency of 41 % and a threshold current density of 1.0 kA/cm2 at room temperature. Temperature-dependent laser studies reveal characteristic temperatures of T0 = (132 ± 3) K over the whole temperature range and T1 = (159 ± 13) K between 10 °C and 70 °C and T1 = (40 ± 1) K between 80 °C and 100 °C.",

author = "C. Fuchs and A. Br{\"u}ggemann and Weseloh, {M. J.} and C. Berger and C. M{\"o}ller and S. Reinhard and J. Hader and Moloney, {J. V.} and A. B{\"a}umner and Koch, {S. W.} and W. Stolz",

note = "Funding Information: The authors gratefully acknowledge the funding provided by Deutsche Forschungsgemeinschaft (DFG) in the framework of Sonderforschungsbereich 1083 - Structure and Dynamics of Internal Interfaces, U.S. Air Force Office of Scientific Research in the framework of STTR Phase II, grant # FA9550-16-C-0021, and U.S. Air Force Office of Scientific Research in the framework of contract # FA9550-14-1-0062. Publisher Copyright: {\textcopyright} 2018 The Author(s).",

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doi = "10.1038/s41598-018-19189-1",

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AU - Fuchs, C.

AU - Brüggemann, A.

AU - Weseloh, M. J.

AU - Berger, C.

AU - Möller, C.

AU - Reinhard, S.

AU - Hader, J.

AU - Moloney, J. V.

AU - Bäumner, A.

AU - Koch, S. W.

AU - Stolz, W.

N1 - Funding Information: The authors gratefully acknowledge the funding provided by Deutsche Forschungsgemeinschaft (DFG) in the framework of Sonderforschungsbereich 1083 - Structure and Dynamics of Internal Interfaces, U.S. Air Force Office of Scientific Research in the framework of STTR Phase II, grant # FA9550-16-C-0021, and U.S. Air Force Office of Scientific Research in the framework of contract # FA9550-14-1-0062. Publisher Copyright: © 2018 The Author(s).

PY - 2018/12/1

Y1 - 2018/12/1

N2 - Electrical injection lasers emitting in the 1.3 μm wavelength regime based on (GaIn)As/Ga(AsSb)/(GaIn)As type-II double "W"-quantum well heterostructures grown on GaAs substrate are demonstrated. The structure is designed by applying a fully microscopic theory and fabricated using metal organic vapor phase epitaxy. Temperature-dependent electroluminescence measurements as well as broad-area edge-emitting laser studies are carried out in order to characterize the resulting devices. Laser emission based on the fundamental type-II transition is demonstrated for a 975 μm long laser bar in the temperature range between 10 °C and 100 °C. The device exhibits a differential efficiency of 41 % and a threshold current density of 1.0 kA/cm2 at room temperature. Temperature-dependent laser studies reveal characteristic temperatures of T0 = (132 ± 3) K over the whole temperature range and T1 = (159 ± 13) K between 10 °C and 70 °C and T1 = (40 ± 1) K between 80 °C and 100 °C.

AB - Electrical injection lasers emitting in the 1.3 μm wavelength regime based on (GaIn)As/Ga(AsSb)/(GaIn)As type-II double "W"-quantum well heterostructures grown on GaAs substrate are demonstrated. The structure is designed by applying a fully microscopic theory and fabricated using metal organic vapor phase epitaxy. Temperature-dependent electroluminescence measurements as well as broad-area edge-emitting laser studies are carried out in order to characterize the resulting devices. Laser emission based on the fundamental type-II transition is demonstrated for a 975 μm long laser bar in the temperature range between 10 °C and 100 °C. The device exhibits a differential efficiency of 41 % and a threshold current density of 1.0 kA/cm2 at room temperature. Temperature-dependent laser studies reveal characteristic temperatures of T0 = (132 ± 3) K over the whole temperature range and T1 = (159 ± 13) K between 10 °C and 70 °C and T1 = (40 ± 1) K between 80 °C and 100 °C.

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High-temperature operation of electrical injection type-II (GaIn)As/Ga(AsSb)/(GaIn)As "w"-quantum well lasers emitting at 1.3 μm

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