High-temperature operation of electrical injection type-II (GaIn)As/Ga(AsSb)/(GaIn)As "w"-quantum well lasers emitting at 1.3 μm

C. Fuchs, A. Brüggemann, M. J. Weseloh, C. Berger, C. Möller, S. Reinhard, Jorg Hader, Jerome V Moloney, A. Bäumner, Stephan W Koch, W. Stolz

Research output: Contribution to journalArticle

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Abstract

Electrical injection lasers emitting in the 1.3 μm wavelength regime based on (GaIn)As/Ga(AsSb)/(GaIn)As type-II double "W"-quantum well heterostructures grown on GaAs substrate are demonstrated. The structure is designed by applying a fully microscopic theory and fabricated using metal organic vapor phase epitaxy. Temperature-dependent electroluminescence measurements as well as broad-area edge-emitting laser studies are carried out in order to characterize the resulting devices. Laser emission based on the fundamental type-II transition is demonstrated for a 975 μm long laser bar in the temperature range between 10 °C and 100 °C. The device exhibits a differential efficiency of 41 % and a threshold current density of 1.0 kA/cm2 at room temperature. Temperature-dependent laser studies reveal characteristic temperatures of T0 = (132 ± 3) K over the whole temperature range and T1 = (159 ± 13) K between 10 °C and 70 °C and T1 = (40 ± 1) K between 80 °C and 100 °C.

Original languageEnglish (US)
Article number1422
JournalScientific Reports
Volume8
Issue number1
DOIs
StatePublished - Dec 1 2018

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Lasers
Injections
Temperature
Equipment and Supplies
Metals

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  • General

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High-temperature operation of electrical injection type-II (GaIn)As/Ga(AsSb)/(GaIn)As "w"-quantum well lasers emitting at 1.3 μm. / Fuchs, C.; Brüggemann, A.; Weseloh, M. J.; Berger, C.; Möller, C.; Reinhard, S.; Hader, Jorg; Moloney, Jerome V; Bäumner, A.; Koch, Stephan W; Stolz, W.

In: Scientific Reports, Vol. 8, No. 1, 1422, 01.12.2018.

Research output: Contribution to journalArticle

Fuchs, C. ; Brüggemann, A. ; Weseloh, M. J. ; Berger, C. ; Möller, C. ; Reinhard, S. ; Hader, Jorg ; Moloney, Jerome V ; Bäumner, A. ; Koch, Stephan W ; Stolz, W. / High-temperature operation of electrical injection type-II (GaIn)As/Ga(AsSb)/(GaIn)As "w"-quantum well lasers emitting at 1.3 μm. In: Scientific Reports. 2018 ; Vol. 8, No. 1.
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abstract = "Electrical injection lasers emitting in the 1.3 μm wavelength regime based on (GaIn)As/Ga(AsSb)/(GaIn)As type-II double {"}W{"}-quantum well heterostructures grown on GaAs substrate are demonstrated. The structure is designed by applying a fully microscopic theory and fabricated using metal organic vapor phase epitaxy. Temperature-dependent electroluminescence measurements as well as broad-area edge-emitting laser studies are carried out in order to characterize the resulting devices. Laser emission based on the fundamental type-II transition is demonstrated for a 975 μm long laser bar in the temperature range between 10 °C and 100 °C. The device exhibits a differential efficiency of 41 {\%} and a threshold current density of 1.0 kA/cm2 at room temperature. Temperature-dependent laser studies reveal characteristic temperatures of T0 = (132 ± 3) K over the whole temperature range and T1 = (159 ± 13) K between 10 °C and 70 °C and T1 = (40 ± 1) K between 80 °C and 100 °C.",
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AU - Weseloh, M. J.

AU - Berger, C.

AU - Möller, C.

AU - Reinhard, S.

AU - Hader, Jorg

AU - Moloney, Jerome V

AU - Bäumner, A.

AU - Koch, Stephan W

AU - Stolz, W.

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