Abstract
Electrical injection lasers emitting in the 1.3 μm wavelength regime based on (GaIn)As/Ga(AsSb)/(GaIn)As type-II double "W"-quantum well heterostructures grown on GaAs substrate are demonstrated. The structure is designed by applying a fully microscopic theory and fabricated using metal organic vapor phase epitaxy. Temperature-dependent electroluminescence measurements as well as broad-area edge-emitting laser studies are carried out in order to characterize the resulting devices. Laser emission based on the fundamental type-II transition is demonstrated for a 975 μm long laser bar in the temperature range between 10 °C and 100 °C. The device exhibits a differential efficiency of 41 % and a threshold current density of 1.0 kA/cm2 at room temperature. Temperature-dependent laser studies reveal characteristic temperatures of T0 = (132 ± 3) K over the whole temperature range and T1 = (159 ± 13) K between 10 °C and 70 °C and T1 = (40 ± 1) K between 80 °C and 100 °C.
| Original language | English (US) |
|---|---|
| Article number | 1422 |
| Journal | Scientific Reports |
| Volume | 8 |
| Issue number | 1 |
| DOIs | |
| State | Published - Dec 1 2018 |
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High-temperature operation of electrical injection type-II (GaIn)As/Ga(AsSb)/(GaIn)As "w"-quantum well lasers emitting at 1.3 μm. / Fuchs, C.; Brüggemann, A.; Weseloh, M. J.; Berger, C.; Möller, C.; Reinhard, S.; Hader, Jorg; Moloney, Jerome V; Bäumner, A.; Koch, Stephan W; Stolz, W.
In: Scientific Reports, Vol. 8, No. 1, 1422, 01.12.2018.Research output: Contribution to journal › Article
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TY - JOUR
T1 - High-temperature operation of electrical injection type-II (GaIn)As/Ga(AsSb)/(GaIn)As "w"-quantum well lasers emitting at 1.3 μm
AU - Fuchs, C.
AU - Brüggemann, A.
AU - Weseloh, M. J.
AU - Berger, C.
AU - Möller, C.
AU - Reinhard, S.
AU - Hader, Jorg
AU - Moloney, Jerome V
AU - Bäumner, A.
AU - Koch, Stephan W
AU - Stolz, W.
PY - 2018/12/1
Y1 - 2018/12/1
N2 - Electrical injection lasers emitting in the 1.3 μm wavelength regime based on (GaIn)As/Ga(AsSb)/(GaIn)As type-II double "W"-quantum well heterostructures grown on GaAs substrate are demonstrated. The structure is designed by applying a fully microscopic theory and fabricated using metal organic vapor phase epitaxy. Temperature-dependent electroluminescence measurements as well as broad-area edge-emitting laser studies are carried out in order to characterize the resulting devices. Laser emission based on the fundamental type-II transition is demonstrated for a 975 μm long laser bar in the temperature range between 10 °C and 100 °C. The device exhibits a differential efficiency of 41 % and a threshold current density of 1.0 kA/cm2 at room temperature. Temperature-dependent laser studies reveal characteristic temperatures of T0 = (132 ± 3) K over the whole temperature range and T1 = (159 ± 13) K between 10 °C and 70 °C and T1 = (40 ± 1) K between 80 °C and 100 °C.
AB - Electrical injection lasers emitting in the 1.3 μm wavelength regime based on (GaIn)As/Ga(AsSb)/(GaIn)As type-II double "W"-quantum well heterostructures grown on GaAs substrate are demonstrated. The structure is designed by applying a fully microscopic theory and fabricated using metal organic vapor phase epitaxy. Temperature-dependent electroluminescence measurements as well as broad-area edge-emitting laser studies are carried out in order to characterize the resulting devices. Laser emission based on the fundamental type-II transition is demonstrated for a 975 μm long laser bar in the temperature range between 10 °C and 100 °C. The device exhibits a differential efficiency of 41 % and a threshold current density of 1.0 kA/cm2 at room temperature. Temperature-dependent laser studies reveal characteristic temperatures of T0 = (132 ± 3) K over the whole temperature range and T1 = (159 ± 13) K between 10 °C and 70 °C and T1 = (40 ± 1) K between 80 °C and 100 °C.
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U2 - 10.1038/s41598-018-19189-1
DO - 10.1038/s41598-018-19189-1
M3 - Article
C2 - 29362369
AN - SCOPUS:85041008094
VL - 8
JO - Scientific Reports
JF - Scientific Reports
SN - 2045-2322
IS - 1
M1 - 1422
ER -