High-temperature operation of electrical injection type-II (GaIn)As/Ga(AsSb)/(GaIn)As "w"-quantum well lasers emitting at 1.3 μm

C. Fuchs, A. Brüggemann, M. J. Weseloh, C. Berger, C. Möller, S. Reinhard, J. Hader, J. V. Moloney, A. Bäumner, S. W. Koch, W. Stolz

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Abstract

Electrical injection lasers emitting in the 1.3 μm wavelength regime based on (GaIn)As/Ga(AsSb)/(GaIn)As type-II double "W"-quantum well heterostructures grown on GaAs substrate are demonstrated. The structure is designed by applying a fully microscopic theory and fabricated using metal organic vapor phase epitaxy. Temperature-dependent electroluminescence measurements as well as broad-area edge-emitting laser studies are carried out in order to characterize the resulting devices. Laser emission based on the fundamental type-II transition is demonstrated for a 975 μm long laser bar in the temperature range between 10 °C and 100 °C. The device exhibits a differential efficiency of 41 % and a threshold current density of 1.0 kA/cm2 at room temperature. Temperature-dependent laser studies reveal characteristic temperatures of T0 = (132 ± 3) K over the whole temperature range and T1 = (159 ± 13) K between 10 °C and 70 °C and T1 = (40 ± 1) K between 80 °C and 100 °C.

Original languageEnglish (US)
Article number1422
JournalScientific reports
Volume8
Issue number1
DOIs
StatePublished - Dec 1 2018

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